MOS-diode characteristics of ultrathin Al2 O3 gate dielectrics after exposure to an electron-cyclotron-resonance plasma stream

Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

Volumn 23, Issue 4, 2005, Pages 1480-1486

  Jin, Yoshito ^a   Saito, Kunio ^a   Shimada, Masaru ^a   Ono, Toshiro ^a,b  

^a NTT CORPORATION   (Japan)

^b HIROSAKI UNIVERSITY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CAPACITANCE; DIELECTRIC MATERIALS; DIODES; ELECTRIC POTENTIAL; ELECTRON CYCLOTRON RESONANCE; MOS DEVICES; PLASMAS; SPUTTER DEPOSITION; X RAY PHOTOELECTRON SPECTROSCOPY;

ENERGY SHIFTS; GATE DIELECTRICS; METAL BONDS; PLASMA EXPOSURE;

ALUMINA;

EID: 31344464929     PISSN: 10711023     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.1941250     Document Type: Article

References (32)

1. H. S. Momose, E. Morifuji, T. Yoshitomi, T. Ohguro, M. Saito, T. Morimoto, Y. Katsumata, and H. Iwai, Tech. Dig. - Int. Electron Devices Meet. 1996, 105 (1996).
2. L. Manchanda, B. Busch, M. L. Green, M. Morris, R. B. van Dover, R. Kwo, and S. Aravamudhan, Extended Abstracts of International Workshop on Gate Insulator, Tokyo, 2001, p. 56 (unpublished).
3. G. D. Wilk, R. M. Wallace, and J. M. Anthony, J. Appl. Phys. 89, 5243 (2001).
4. J. Robertson, J. Vac. Sci. Technol. B 18, 1785 (2000).
5. S. Guha, E. P. Gusev, H. Okorn-Schmidt, M. Copel, L.-Å Ragnarsson, and N. A. Bojarczuk, Appl. Phys. Lett. 81, 2956 (2002).
6. J.-S. Kim, T. Hoshi, K. Sawada, and M. Ishida, J. Vac. Sci. Technol. B 22, 1358 (2004).
7. D. Park, Y. King, Q. Lu, T.-J. King, C. Hu, A. Kalnitsky, S.-P. Tay, and C.-C. Cheng, IEEE Electron Device Lett. 19, 441 (1998).
8. T. Amazawa, T. Ono, M. Shimada, S. Matsuo, and H. Oikawa, J. Vac. Sci. Technol. B 17, 2222 (1999).
9. H. Watanabe, Appl. Phys. Lett. 78, 3803 (2001).
10. K. Saito, Y. Jin, and M. Shimada, Proceedings of the second International Conference on Semiconductor Technology, Tokyo, 2002, p. 237 (unpublished).
11. K. Saito, Y. Jin, and M. Shimada, Appl. Phys. Lett. 81, 3582 (2002).
12. G. D. Wilk, R. M. Wallace, and J. M. Anthony, J. Appl. Phys. 87, 484 (2000).
13. Y. Jin, K. Saito, M. Shimada, and T. Ono, J. Vac. Sci. Technol. B 21, 942 (2003).
14. National Institute of Standards and Technology, NIST X-ray Photoelectron Spectroscopy Database, URL: http://www.nist.gov/.
15. P. Ericsson, S. Bengtsson, and J. Skarp, Microelectron. Eng. 36, 91 (1997).
16. S. M. Sze, Physics of Semiconductor Devices, 2nd ed. (Wiley & Sons, Inc., New York, 1981).
17. S. Matsuo and M. Kiuchi, Jpn. J. Appl. Phys., Part 2 22, L210 (1983).
18. T. Ono, M. Oda C. Takahashi, and S. Matsuo, J. Vac. Sci. Technol. B 4, 696 (1986).
19. N. Sadeghi, T. Nakano, D. J. Trevor, and R. A. Gottsho, J. Appl. Phys. 70, 2552 (1991).
20. T. Tsuchizawa, Y. Jin, and S. Matsuo, Appl. Phys. Lett. 69, 149 (1996).
21. G. S. Oehrlein and J. F. Rembetski, IBM J. Res. Dev. 36, 140 (1992).
22. N. Blayo, I. Tepermeister, J. L. Benton, G. S. Higashi, T. Boone, A. Onuoha, F. P. Klemens, D. E. Ibbotson, J. T. C. Lee, and H. H. Sawin, J. Vac. Sci. Technol. B 12, 1340 (1994).
23. R. Muniandy, R. Boylan, R. Chin, N. Bell, and R. Sankaman, J. Vac. Sci. Technol. B 15, 1913 (1997).
24. E. P. Gusev, M. Copel, E. Cartier, I. J. R. Baumvol, C. Krug, and M. A. Gribelyuk, Appl. Phys. Lett. 76, 176 (2000).
25. S. Manzini, J. Appl. Phys. 62, 3278 (1987).
26. S. Banerjee, B. Shen, I. Chen, J. Bohlman, G. Brown, and R. Doering, J. Appl. Phys. 65, 1140 (1989).
27. H. Zhang, R. Solanki, B. Roberds, G. Bai, and I. Banerjee, J. Appl. Phys. 87, 1921 (2000).
28. T. W. Hickmott, J. Appl. Phys. 87, 7903 (2000).
29. H. Yamada, J. Appl. Phys. 93, 4902 (2003).
30. A. Mesarwi, W. C. Fan, and A. Ignatiev, J. Appl. Phys. 68, 3609 (1990).
31. W.-K. Choi, S.-K. Koh, and H.-J. Jung, J. Vac. Sci. Technol. A 17, 3362 (1999).
32. D. Hasha, L. S. de Saldarriaga, C. Saldarriaga, P. E. Hathaway, D. F. Cox, and M. E. Davis, J. Am. Chem. Soc. 110, 2127 (1988).