Density and nitrogen content of ultrathin silicon oxide gate films grown using in situ pyrolytic-gas passivation

Journal of Applied Physics

Volumn 93, Issue 8, 2003, Pages 4902-4908

  Yamada, Hiroshi ^a  

^a NTT CORPORATION   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CHARGED PARTICLES; CHEMICAL BONDS; COMPUTER SIMULATION; DENSITY OF GASES; GROWTH (MATERIALS); INTERFACES (MATERIALS); MICROSCOPIC EXAMINATION; NITROGEN; OXIDATION; SILICON COMPOUNDS;

PYROLYTIC-GAS PASSIVATION;

ULTRATHIN FILMS;

EID: 0037965562     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1562011     Document Type: Article

References (58)

1. P. J. Wright and K. C. Saraswat, IEEE Trans. Electron Devices ED-37, 1884 (1990).
2. D. J. DiMaria, E. Cartier, and D. Arnold, J. Appl. Phys. 73, 3367 (1993).
3. Y. Kado, H. Inokawa, Y. Okazaki, T. Tsuchiya, Y. Kawai, M. Sato, Y. Sakakibara, S. Nakayama, H. Yamada, M. Kitamura, S. Nakashima, K. Nishimura, S. Date, M. Ino, K. Takeya, and T. Sakai, in 1995 IEEE International Electron Devices Meeting Technical Digest (IEEE, New York, 1995), p. 635.
4. H. Yamada, in Proceedings of the 4th International Conference on Advanced Thermal Processing of Semiconductors (RTP'96, Round Rock, TX, 1996), p. 103.
5. M. Lenzlinger and E. H. Snow, J. Appl. Phys. 40, 278 (1969).
6. R. B. Fair and R. C. Sun, IEEE Trans. Electron Devices ED-28, 83 (1981).
7. W. Weber, IEEE Trans. Electron Devices ED-35, 1476 (1988).
8. Y. Nissan-Cohen, H. H. Woodbury, T. B. Gorczyca, and C.-Y. Wei, in Proceedings of the Symposium on VLSI Technology (IEEE, New York, 1988), p. 37.
9. M. V. Fischetti, Z. A. Weinberg, and J. A. Galise, J. Appl. Phys. 57, 418 (1985).
10. H. Yamada and T. Makino, Appl. Phys. Lett. 59, 2159 (1991).
11. Y. Ohji, Y. Nishioka, K. Yokogawa, K. Mukai, Q. Qiu, E. Arai, and T. Sugano, IEEE Trans. Electron Devices ED-37, 1635 (1990).
12. H. Yamada and M. Tabe, Jpn. J. Appl. Phys., Part 2 31, L747 (1992).
13. H. Yamada and M. Tabe, IEEE Electron Device Lett. EDL-12, 536 (1991).
14. H. Yamada, J. Mater. Sci. Lett. 21, 1493 (2002).
15. H. Yamada, J. Vac. Sci. Technol. B 20, 1847 (2002).
16. H. Yamada, J. Vac. Sci. Technol. B 12, 3112 (1994).
17. H. Yamada, J. Vac. Sci. Technol. B 14, 757 (1996).
18. H. Yamada, J. Appl. Phys. 82, 4916 (1997).
19. H. Yamada, J. Appl. Phys. 86, 5968 (1999).
20. H. Yamada, J. Vac. Sci. Technol. A 19, 627 (2001).
21. H. Yamada, J. Electron. Mater. 30, 1021 (2001).
22. H. Yamada, J. Electron. Mater. 28, 377 (1999).
23. D. L. Griscom, J. Appl. Phys. 58, 2524 (1985).
24. 2 and Its Interfaces, edited by S. T. Pantelides (Pergamon, New York, 1978), p. 428.
25. 2 Interfaces, edited by C. R. Helms and B. E. Deal (Plenum, New York, 1988), p. 287.
26. K. R. Hofmann, C. Werner, W. Weber, and G. Dorda, IEEE Trans. Electron Devices ED-32, 691 (1985).
27. D. J. DiMaria and J. W. Stasiak, J. Appl. Phys. 65, 2342 (1989).
28. H. Hwang, W. Ting, B. Maiti, D. L. Kwong, and J. Lee, Appl. Phys. Lett. 57, 1010 (1990).
29. D. Wristers, L. K. Han, T. Chen, H. Hwang, D. L. Kwong, M. Allen, and J. Fulford, Appl. Phys. Lett. 68, 2094 (1996).
30. E. C. Carr and R. A. Buhrman, Appl. Phys. Lett. 63, 54 (1993).
31. D. Mathiot, A. Straboni, E. Andre, and P. Debenest, J. Appl. Phys. 73, 8215 (1993).
32. M. Bhat, L. K. Han, D. Wristers, J. Yan, and D. L. Kwong, Appl. Phys. Lett. 66, 1225 (1995).
33. K. S. Krisch, M. L. Green, F. H. Baumann, D. Brasen, L. C. Feldman, and L. Manchanda, IEEE Trans. Electron Devices ED-43, 982 (1996).
34. H. Yamada, J. Appl. Phys. 91, 1108 (2002).
35. K. Suzuki and K. Shibata, in Current Topics in Amorphous Materials: Physics and Technology, edited by Y. Sakurai, Y. Hamakawa, T. Masumoto, K. Shirae, and K. Suzuki (Elsevier, Tokyo, 1993), p. 22.
36. K. Suzuki, K. Shibata, and H. Mizuseki, J. Non-Cryst. Solids 156/158, 58 (1993).
37. K. Suzuki, T. Fukunaga, K. Shibata, T. Otomo, and H. Mizuseki, in Thermodynamics of Alloy Formation, edited by Y. A. Chang and F. Sommer (TMS, Warrendale, PA, 1997), p. 125.
38. R. L. Mozzi and B. E. Warren, J. Appl. Crystallogr. 2, 164 (1969).
39. F. L. Galeener, J. Non-Cryst. Solids 49, 53 (1982).
40. W. C. Marra, P. H. Fuoss, and P. Eisenberger, Phys. Rev. Lett. 46, 1081 (1981).
41. J. Bohr, R. Feidenhans'l, M. Nielsen, M. Taney, R. L. Johnson, and I. K. Robinson, Phys. Rev. Lett. 54, 1275 (1985).
42. M. Saito, E. Matsubara, and Y. Waseda, Mater. Trans., JIM 37, 39 (1996).
43. Y. Waseda, Novel Application of Anomalous X-ray Scattering for Structural Characterization of Disordered Materials (Springer, New York, 1984).
44. H. Yamada, Rev. Sci. Instrum. 65, 3501 (1994).
45. E. Ricci, in Advance in Activation Analysis, edited by J. M. A. Lenihan, J. J. Thomson, and V. P. Guinn (Academic, New York, 1972), Vol. 2, p. 221.
46. K. H. Hellwege, Landolt-Börnstein Numerical Data and Functional Relationships in Science and Technology (Springer-Verlag, Berlin, 1973), Vol. 5.
47. C. M. Lederer and V. S. Shirley, Table of Isotopes, 7th ed. (Wiley, New York, 1978).
48. E. Ricci and R. L. Hahn, Anal. Chem. 37, 742 (1965).
49. R. Flitsch and S. I. Raider, J. Vac. Sci. Technol. 12, 305 (1975).
50. W. Braun and H. Kuhlenbeck, Surf. Sci. 180, 279 (1987).
51. E. Bauer, Vacuum 22, 539 (1972).
52. R. Haight and L. C. Feldman, J. Appl. Phys. 53, 4884 (1982).
53. R. W. G. Wyckoff, Crystal Structures (Interscience, New York, 1965).
54. F. Rochet, S. Rigo, M. Froment, C. d'Anterroches, C. Maillot, H. Roulet, and G. Dufour, Adv. Phys. 35, 237 (1986).
55. C. N. Berglund and R. J. Powell, J. Appl. Phys. 42, 573 (1971).
56. U. Buchenau, M. Prager, N. Nücker, A. J. Dianoux, N. Ahmad, and W. A. Phillips, Phys. Rev. B 34, 5665 (1986).
57. V. A. Luchnikov, N. N. Medredev, Y. I. Naberukhin, and V. N. Novikov, Phys. Rev. B 51, 15569 (1995).
58. E. M. Nicollian and J. R. Brews, MOS Physics and Technology (Wiley, New York, 1982).