Simulation of a Ge-Si hetero-nanocrystal memory

IEEE Transactions on Nanotechnology

Volumn 5, Issue 1, 2006, Pages 37-41

  Zhao, Dengtao ^a,b   Zhu, Yan ^b   Li, Ruigang ^a,b   Liu, Jianlin ^a,b  

^a IEEE   (United States)

^b University of California Riverside   (United States)

Author keywords

Erasing; Hetero nanocrystal memory; Programming; Retention

Indexed keywords

ERASING; HETERO-NANOCRYSTAL MEMORY; PROGRAMMING; RETENTION;

COMPUTER SIMULATION; GERMANIUM; OXIDES; SEMICONDUCTOR QUANTUM WELLS; SILICON;

NANOSTRUCTURED MATERIALS;

EID: 31144456480     PISSN: 1536125X     EISSN: None     Source Type: Journal    
DOI: 10.1109/TNANO.2005.861405     Document Type: Article

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