A silicon single-electron transistor memory operating at room temperature

Science

Volumn 275, Issue 5300, 1997, Pages 649-651

  Guo, Lingjie ^a   Leobandung, Effendi ^a   Chou, Stephen Y ^a  

^a UNIVERSITY OF MINNESOTA   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

AMBIENT AIR; ARTICLE; COMPUTER MEMORY; INTEGRATED CIRCUIT; PRIORITY JOURNAL; SEMICONDUCTOR;

EID: 0031039096     PISSN: 00368075     EISSN: None     Source Type: Journal    
DOI: 10.1126/science.275.5300.649     Document Type: Article

References (10)

1. K. Yano et al., IEEE Trans. Electron Devices 41, 1628 (1994).
2. S. Tiwari et al., Appl. Phys. Lett. 68, 1377 (1996).
3. S. Y. Chou, unpublished results.
4. P. B. Fischer and S. Y. Chou, Appl. Phys. Lett. 62, 2989 (1993); J. Vac. Sci. Technol. B 11, 2524 (1993); E. Leobandung, L. Guo, S. Y. Chou, ibid. 13, 2865 (1995).
5. P. B. Fischer and S. Y. Chou, Appl. Phys. Lett. 62, 2989 (1993); J. Vac. Sci. Technol. B 11, 2524 (1993); E. Leobandung, L. Guo, S. Y. Chou, ibid. 13, 2865 (1995).
6. P. B. Fischer and S. Y. Chou, Appl. Phys. Lett. 62, 2989 (1993); J. Vac. Sci. Technol. B 11, 2524 (1993); E. Leobandung, L. Guo, S. Y. Chou, ibid. 13, 2865 (1995).
7. H. I. Liu, D. K. Biegelsen, F. A. Ponce, N. M. Johnson, R. F. W. Pease, Appl. Phys. Lett. 64, 1383 (1994).
8. The capacitance between the floating gate and the channel was calculated by the image charge method.
9. See, for example, J. R. Davis, Instabilities in MOS Devices (Gorden and Breach, New York, 1980).
10. This work was partially supported by the Defense Advanced Research Projects Agency, the Office of Naval Research, the Army Research Office, and the National Science Foundation.