Minimization of germanium penetration, nanocrystal formation, charge storage, and retention in a trilayer memory structure with silicon nitride/hafnium dioxide stack as the tunnel dielectric

Applied Physics Letters

Volumn 84, Issue 22, 2004, Pages 4385-4387

  Ng, T H ^a   Chim, W K ^a   Choi, W K ^a   Ho, V ^a   Teo, L W ^a   Du, A Y ^b   Tung, C H ^b  

^a NATIONAL UNIVERSITY OF SINGAPORE   (Singapore)

^b INSTITUTE OF MICROELECTRONICS   (Singapore)

Author keywords

[No Author keywords available]

Indexed keywords

CHARGE STORAGE; EQUIVALENT OXIDE THICKNESS (EOT); RAPID THERMAL OXIDES (RTO); TRILAYER STRUCTURES;

CAPACITANCE; CHARGE CARRIERS; DIFFUSION; ELECTRIC POTENTIAL; HAFNIUM COMPOUNDS; INTERFACES (MATERIALS); MATRIX ALGEBRA; METALLORGANIC CHEMICAL VAPOR DEPOSITION; NANOSTRUCTURED MATERIALS; PERMITTIVITY; RAPID THERMAL ANNEALING; SAMPLING; SECONDARY ION MASS SPECTROMETRY; SILICON NITRIDE; SPUTTERING; TRANSMISSION ELECTRON MICROSCOPY;

GERMANIUM;

EID: 3042822401     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1757022     Document Type: Article

References (9)

1. S. Tiwari, F. Rana, H. Hanafi, A. Hartstein, E. F. Crabbe, and K. Chan, Appl. Phys. Lett. 68, 1377 (1996).
2. Y. C. King, T. J. King, and C. Hu, Tech. Dig. - Int. Electron Devices Meet. 1998, 115.
3. Y. C. King, T. J. King, and C. Hu, IEEE Trans. Electron Devices 48, 696 (2001).
4. W. K. Choi, W. K. Chim, C. L. Heng, L. W. Teo, V. Ho, V. Ng, D. A. Antoniadis, and E. A. Fitzgerald, Appl. Phys. Lett. 80, 2014 (2002).
5. L. W. Teo, W. K. Choi, W. K. Chim, V. Ho, C. M. Moey, M. S. Tay, C. L. Heng, Y. Lei, D. A. Antoniadis, and E. A. Fitzgerald, Appl. Phys. Lett. 81, 3639 (2002).
6. V. Ho, M. S. Tay, C. H. Moey, L. W. Teo, W. K. Choi, W. K. Chim, C. L. Heng, and Y. Lei, Microelectron. Eng. 66, 33 (2003).
7. V. Ho, L. W. Teo, W. K. Choi, W. K. Chim, M. S. Tay, D. A. Antoniadis, E. A. Fitzgerald, A. Y. Du, C. H. Tung, R. Liu, and A. T. S. Wee, Appl. Phys. Lett. 83, 3558 (2003).
8. K. H. Heinig, B. Schmidt, A. Markwitz, R. Grötzschel, M. Strobel, and S. Oswald, Nucl. Instrum. Methods Phys. Res. B 148, 969 (1999).
9. Y. Kim, K. H. Park, W. C. Choi, T. H. Chung, H. J. Bark, J. Y. Yi, and J. Jeong, Mater. Sci. Eng., B 83, 145 (2001).