Nonvolatile memory based on Ge/Si hetero-nanocrystals

Applied Surface Science

Volumn 224, Issue 1-4, 2004, Pages 394-398

  Yang, H G ^a   Shi, Y ^a   Pu, L ^a   Zhang, R ^a   Shen, B ^a   Han, P ^a   Gu, S L ^a   Zheng, Y D ^a  

^a NANJING UNIVERSITY   (China)

Author keywords

Ge Si; Hetero nanocrystals; Nonvolatile memory

Indexed keywords

BAND STRUCTURE; COMPUTER PROGRAMMING; ELECTRIC POTENTIAL; ELECTRON TUNNELING; GATES (TRANSISTOR); MOSFET DEVICES; NANOSTRUCTURED MATERIALS; SEMICONDUCTING GERMANIUM; SEMICONDUCTING SILICON; VLSI CIRCUITS;

GE/SI; HETERO-NANOCRYSTALS; HIGH-SPEED PROGRAMMING; NONVOLATILE MEMORY;

NONVOLATILE STORAGE;

EID: 1142280303     PISSN: 01694332     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.apsusc.2003.08.079     Document Type: Conference Paper

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