Three-dimensional modeling of the high pressure organometallic chemical vapor deposition of InN using trimethylindium and ammonia

Materials Research Society Symposium - Proceedings

Volumn 693, Issue , 2002, Pages 73-80

  McCall, Sonya D ^a   Bachmann, Klaus J ^a  

^a SPELMAN COLLEGE   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

AMMONIA; CHANNEL FLOW; CHEMICAL REACTIONS; COMPUTATIONAL FLUID DYNAMICS; COMPUTER SIMULATION; HIGH PRESSURE EFFECTS; METALLORGANIC CHEMICAL VAPOR DEPOSITION; PYROLYSIS; SEMICONDUCTOR GROWTH; SURFACE PHENOMENA; THERMODYNAMIC STABILITY; TRANSPORT PROPERTIES;

COMPACT HARD SHELL REACTOR; DIFFERENTIALLY PRESSURE CONTROLLED REACTOR; SURFACE DECOMPOSITION; TRIMETHYLINDIUM;

SEMICONDUCTING INDIUM COMPOUNDS;

EID: 0036374018     PISSN: 02729172     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (14)

1. Real-time optical monitoring of flow kinetics and gas phase reactions under high-pressure OMCVD conditions