Hot-carrier reliability comparison for pmosfets with ultrathin silicon-nitride and silicon-oxide gate dielectrics

IEEE Transactions on Device and Materials Reliability

Volumn 1, Issue 3, 2001, Pages 158-162

  Polishchuk, Igor ^a   Yeo, Yee Chia ^a   Lu, Qiang ^a   King, Tsu Jae ^a   Hu, Chenming ^a  

^a UNIVERSITY OF CALIFORNIA   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 3042840893     PISSN: 15304388     EISSN: 15304388     Source Type: Journal    
DOI: 10.1109/7298.974831     Document Type: Article

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