New Hot-Carrier Degradation Mode and Lifetime Prediction Method in Quarter-Micrometer PMOSFET

IEEE Transactions on Electron Devices

Volumn 39, Issue 2, 1992, Pages 404-408

  Tsuchiya, Toshiaki ^a   Okazaki, Yukio ^a   Miyake, Masayasu ^a   Kobayashi, Toshio ^a  

^a NTT CORPORATION   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

MICROELECTRONICS; SEMICONDUCTOR DEVICES, MOSFET;

BURIED CHANNEL MOSFETS; HOT CARRIER DEGRADATION; LIFETIME PREDICTION; NMOSFETS; PMOSFETS; QUARTER MICROMETER MOSFETS;

TRANSISTORS, FIELD EFFECT;

EID: 0026821710     PISSN: 00189383     EISSN: 15579646     Source Type: Journal    
DOI: 10.1109/16.121700     Document Type: Article

References (13)

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