Analysis of hot-carrier degradation in 0.25-μm surface-channel pMOSFET devices

International Symposium on VLSI Technology, Systems, and Applications, Proceedings

Volumn , Issue , 1999, Pages 82-85

  Liu, Chuan H ^a   Chen, M G ^a   Huang Lu, Shiang ^a   Chang, Y J ^a   Fu, K Y ^a  

^a UNITED MICROELECTRONICS CORPORATION   (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

DEFECTS; ELECTRIC CURRENTS; ELECTRONS; GATES (TRANSISTOR); HOT CARRIERS; INTERFACES (MATERIALS); MATHEMATICAL MODELS; RELIABILITY; STRESSES;

GATE CURRENT; HOT CARRIER DEGRADATION; SURFACE CHANNEL PMOSFET DEVICES; TWO STEP DEGRADATION MODEL;

MOSFET DEVICES;

EID: 0032599254     PISSN: 1524766X     EISSN: None     Source Type: Journal    
DOI: None     Document Type: Article

References (6)