메뉴 건너뛰기




Volumn 8, Issue 9, 1987, Pages 413-416

Modeling of Substrate Current in p-MOSFET's

Author keywords

[No Author keywords available]

Indexed keywords

INTEGRATED CIRCUITS, VLSI;

EID: 0023422499     PISSN: 07413106     EISSN: 15580563     Source Type: Journal    
DOI: 10.1109/EDL.1987.26678     Document Type: Article
Times cited : (25)

References (16)
  • 1
    • 84945713471 scopus 로고
    • Hot-electron-induced MOSFET degradation—Model, monitor, and improvement
    • Feb.
    • C. Hu, S. Tam, F.-C. Hsu, P. K. Ko, T. Y. Chan, and K. W. Kyle, “Hot-electron-induced MOSFET degradation—Model, monitor, and improvement,” IEEE, Trans. Electron Devices, vol. ED-32, pp. 375–385, Feb. 1985.
    • (1985) IEEE, Trans. Electron Devices , vol.ED-32 , pp. 375-385
    • Hu, C.1    Tam, S.2    Hsu, F.-C.3    Ko, P.K.4    Chan, T.Y.5    Kyle, K.W.6
  • 2
    • 0018732586 scopus 로고
    • Lucky electron model of channel hot electron emission
    • C. Hu, “Lucky electron model of channel hot electron emission,” in IEDM Tech. Dig., 1979, pp. 22–25.
    • (1979) IEDM Tech. Dig. , pp. 22-25
    • Hu, C.1
  • 3
    • 0020952509 scopus 로고
    • Hot-electron effects in MOSFETs,” in
    • C. Hu. “Hot-electron effects in MOSFETs,” in IEDM Tech. Dig., 1983, pp. 176–181.
    • (1983) IEDM Tech. Dig. , pp. 176-181
    • Hu, C.1
  • 4
    • 0020764471 scopus 로고
    • Comparison of characteristics of n-channel and p-channel MOSFETs for VLSI's
    • June
    • E. Takeda, Y. Nakagome, H. Kume, N. Suzuki, and H. Asai, “Comparison of characteristics of n-channel and p-channel MOSFETs for VLSI's,” IEEE Trans. Electron Devices, vol. ED-30, pp. 675–680, June 1983.
    • (1983) IEEE Trans. Electron Devices , vol.ED-30 , pp. 675-680
    • Takeda, E.1    Nakagome, Y.2    Kume, H.3    Suzuki, N.4    Asai, H.5
  • 5
    • 84941479261 scopus 로고
    • Hot-electron aging in p-channel MOSFETs for VLSI CMOS
    • Dec.
    • R. Radojcic, “Hot-electron aging in p-channel MOSFETs for VLSI CMOS,” IEEE Trans. Electron Devices, vol. ED-31, p. 1896, Dec. 1984.
    • (1896) IEEE Trans. Electron Devices , vol.ED-31
    • Radojcic, R.1
  • 6
    • 0021786998 scopus 로고
    • Relationship between hot-electron/holes and degradation of p- and n-channel MOSFETs
    • Jan.
    • T. Tsuchiya and J. Frey, “Relationship between hot-electron/holes and degradation of p- and n-channel MOSFETs,” IEEE Electron Device Lett., vol. EDL-6, pp. 8–11, Jan. 1985.
    • (1985) IEEE Electron Device Lett. , vol.EDL-6 , pp. 8-11
    • Tsuchiya, T.1    Frey, J.2
  • 7
    • 0016619927 scopus 로고
    • Modeling weak avalanche multiplication currents in MOSFETs in IGFETs and SOS transistors for CAD
    • Y. A. Elmansy and D. M. Caughey, “Modeling weak avalanche multiplication currents in MOSFETs in IGFETs and SOS transistors for CAD,” in IEDM Tech. Dig., 1975, pp. 31–34.
    • (1975) IEDM Tech. Dig. , pp. 31-34
    • Elmansy, Y.A.1    Caughey, D.M.2
  • 8
    • 0022135706 scopus 로고
    • Dependence of channel electric field in device scaling
    • Oct.
    • T. Y. Chan, P. K. Ko, and C. Hu, “Dependence of channel electric field in device scaling.” IEEE Electron Device Lett., vol. EDL-6, pp. 551–553, Oct. 1985.
    • (1985) IEEE Electron Device Lett. , vol.EDL-6 , pp. 551-553
    • Chan, T.Y.1    Ko, P.K.2    Hu, C.3
  • 9
    • 0021601456 scopus 로고
    • A simple method to characterize substrate current in MOSFETs
    • Dec.
    • T. Y. Chan, P. K. Ko, and C. Hu, “A simple method to characterize substrate current in MOSFETs,” IEEE Electron Device Lett., vol. EDL-5, pp. 505–507, Dec. 1984.
    • (1984) IEEE Electron Device Lett. , vol.EDL-5 , pp. 505-507
    • Chan, T.Y.1    Ko, P.K.2    Hu, C.3
  • 12
    • 0015673363 scopus 로고
    • Electron and hole ionization rates in epitaxial silicon at high electric field
    • W. N. Grant, “Electron and hole ionization rates in epitaxial silicon at high electric field,” Solid-State Electron., vol. 16, p. 1189, 1973.
    • (1973) Solid-State Electron. , vol.16 , pp. 1189
    • Grant, W.N.1
  • 13
    • 0020705132 scopus 로고
    • Generation-annealing kinetics and atomic models of a compensating donor in the surface charge layer of oxidized silicon
    • C. T. Sah. J. Y. C. Sun, and J. J. Tzou, “Generation-annealing kinetics and atomic models of a compensating donor in the surface charge layer of oxidized silicon,” J. Appl. Phys., vol. 54, p. 944, 1983.
    • (1983) J. Appl. Phys. , vol.54 , pp. 944
    • Sah, C.T.1    Sun, J.Y.C.2    Tzou, J.J.3
  • 14
    • 0042983212 scopus 로고
    • Charge multiplication in silicon p-n junctions
    • J. L. Moll and R. Van Overstraeten, “Charge multiplication in silicon p-n junctions,” Solid-State Electron., vol. 6, pp. 147–157, 1963.
    • (1963) Solid-State Electron. , vol.6 , pp. 147-157
    • Moll, J.L.1    Van Overstraeten, R.2
  • 15
    • 0021483045 scopus 로고
    • Lucky-electron model of channel hot-electron injection in MOSFETs
    • Sept.
    • S. Tam, P. K. Ko, and C. Hu, “Lucky-electron model of channel hot-electron injection in MOSFETs,” IEEE Trans. Electron Devices, vol. ED-31, no. 9, pp. 1116–1125, Sept. 1984.
    • (1984) IEEE Trans. Electron Devices , vol.ED-31 , Issue.9 , pp. 1116-1125
    • Tam, S.1    Ko, P.K.2    Hu, C.3
  • 16
    • 0020205140 scopus 로고
    • An analytical breakdown model for short-Channel MOSFETs
    • Nov.
    • F.-C. Hsu, P. K. Ko, S. Tam, C. Hu, and R. S. Muller, “An analytical breakdown model for short-Channel MOSFETs.” IEEE Trans. Electron Devices, vol. ED-29, no. 11, pp. 1735–1740, Nov. 1982.
    • (1982) IEEE Trans. Electron Devices , vol.ED-29 , Issue.11 , pp. 1735-1740
    • Hsu, F.-C.1    Ko, P.K.2    Tam, S.3    Hu, C.4    Muller, R.S.5


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.