COMPETING AC HOT-CARRIER DEGRADATIONMECHANISMS 1Dy SURFACE-CHANNELP-MOSFET's DURING PASS TRANSISTOR OPERATION

Technical Digest - International Electron Devices Meeting, IEDM

Volumn , Issue , 1996, Pages 873-876

  Bravaix, A ^a   Vuillaume, D ^b   Goguenheim, D ^a,c   Lasserre, V ^c   Haond, M ^d  

^a Maison des Technologies   (France)

^b INSTITUT D ELECTRONIQUE   (France)

^c Matra MHS   (France)

^d ORANGE LABS   (France)

Author keywords

[No Author keywords available]

Indexed keywords

DEGRADATION; ELECTRON TRAPS; MOSFET DEVICES; ELECTRONS; HOT CARRIERS; INTERFACES (MATERIALS); OXIDES; RELIABILITY; TRANSCONDUCTANCE;

CHANNEL SHORTENING; DEGRADATION MECHANISM; ELECTRON TRAPPING; HOT-CARRIERS; INTERFACE TRAPS; MOSFETS; PASS TRANSISTORS; PMOSFET; SURFACE CHANNEL; TRANSISTOR OPERATION;

HOT CARRIERS; MOSFET DEVICES;

DEGRADATION MECHANISM; ELECTRON TRAP; INTERFACE TRAPS;

EID: 0030387079     PISSN: 01631918     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/IEDM.1996.554118     Document Type: Conference Paper

References (12)

1. [l] B.S.Doyle, K.R Mtstry; "A L&me Pre&&on Method for Hot-Camer Degadatmn m Surface-Channelp-MOS Demces", Trans Electron Devices. Vol 37,p 1301,1990
2. F Matsuoka et al., "Analysis of Hot-Camer-Induced Degradation Mode onp-MOSFET's", Trans Electron Demces, Val 37, p 1487,1990
3. Q Wang, M.Brox, W H Krautscheider, W Weber, "Explanztion and Model for the Lo-c Tune Dependence of p-MOSFET Degradatmn", ElectronDemceLetters, Vol 12,p 218,1991
4. B.S.Doyle, K R Mistry, "The Charactenzatm of Hot-Camer Damage m p-Channel Transdors", Trans Electron Demces, Vol 40, p 152,1993
5. R Woltjer, A Hamada, E Takeda, "Tme-Dependence of p-MOSFET Hot-Camer Degradation Measured and Intepeted Cmstently Over Ten Orders of Magnitude",Trans ElectronDemces, Vol 40,p 392,1993
6. M Brox, A.Schwerin, "A Model for the Time- and Bias-Dependence of pMOSFET Degradation",Trans Electron Devices, Vol 41, p 1184,1994
7. W Weber, M Brox, T Kunemund, H M Muhlhoff, D S Landsiedel, "Dynamic Degradation m MOSFET's-Part II Applicatxm m the clrclut &wonment", Trans Electron Demces, Vol 37,p 1487,1990
8. K.N.Quader, P Fang, J.T.Yue, P.K.Ko, C Hu, "Hot-Camer-Rehabhty Desi@ Rules for Translatmg Device Degradation to CMOS DigRal Clrclut Degradatlon",Trans ElemonDemces, Vol 41,p 681,1994
9. R.WoltJer,G.M Paulzen, H G Pomp, H.Lifka, P H Woerlee, "ThreeHotCamer Degradatm Me&atllsms m Deep-Subrmcron PMOSET's", Trans Eledron Devices, Vol 42,p 109,1995
10. R Bellens, G Groeseneken, P Heremans, H Maes, "Hot-Camer Degrabon Behamor of n- and P-Channel MOSFET's Under Dynarmc Operation Con&ons", Trans ElectronDev,Vol 41,p 1421,1994
11. K. Barla e t al , "QuantitstiveAuger sputter depth profilmg of very thm nrtrided oxide", J Appl F'hys, Vol 68, W 7, p 3635,1990
12. A.Bravaix, D. Vullaume, D Goguenhenq D Domal, M.Haond, "ImprovedHor-Camer Immwuty of p-MOSFET's wth 8nm ' Thick Nitnded Gate-Oxlde durmg Bi-Duedional Stressmg",INEOS Proc,p 273,1995