Modification and characterization of thin silicon gate oxides using conducting atomic force microscopy

Materials Science and Engineering: B

Volumn 102, Issue 1-3, 2003, Pages 88-93

  Kremmer, S ^a   Peissl, S ^a   Teichert, C ^a   Kuchar, F ^a   Hofer, H ^b  

^a UNIVERSITY OF LEOBEN   (Austria)

^b INFINEON TECHNOLOGIES AUSTRIA AG   (Austria)

Author keywords

Anodic oxidation; Conducting atomic force microscopy; Electric field simulation

Indexed keywords

ANODIC OXIDATION; ATOMIC FORCE MICROSCOPY; COMPUTER SIMULATION; ELECTRIC FIELD EFFECTS; GROWTH (MATERIALS); SILICON;

THIN SILICON GATE OXIDES;

GATES (TRANSISTOR);

EID: 0043014562     PISSN: 09215107     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0921-5107(02)00635-9     Document Type: Conference Paper

References (15)

1. Campbell P.M., Snow E.S., McMarr P.J. Physica B. 227:1996;315.
2. Keyser U.F., Schumacher H.W., Zeitler U., Haug R.J., Eberl K. Phys. Stat. Sol. B. 224:2001;681.
3. Dagata J.A., Schneir J., Harary H.H., Evans C.J., Pastek M.T., Bennett J. Appl. Phys. Lett. 56:1990;2001.
4. Barniol N., Pérez-Murano F., Aymerich X. Appl. Phys. Lett. 61:1992;462.
5. Day H.C., Allee D.R. Appl. Phys. Lett. 62:1993;2691.
6. Snow E.S., Campbell P.M., McMarr P.J. Appl. Phys. Lett. 63:1993;749.
7. Hattori T., Ejiri Y., Saito K. J. Vac. Sci. Technol. A. 12:1994;2586.
8. Avouris Ph., Martel R., Hertel T., Sandstrom R. Appl. Phys. A. 66:1998;659.
9. Ley L., Teuschler T., Mahr K., Miyazaki S., Hundhausen M. J. Vac. Sci. Technol. B. 14:1996;2845.
10. García R., Calleja M., Rohrer H. J. Appl. Phys. 86:1999;1898.
11. Abadal G., Pérez-Murano F., Barniol N., Aymerich X. Appl. Phys. A. 66:1998;791.
12. Dagata J.A., Inoue T., Itoh J., Matsumoto K., Yokoyama H. J. Appl. Phys. 84:1998;6891.
13. Student's QuickField™ 4.2T, Version 4.2.2.2, Copyright (©) 1993-2001 Tera Analysis, www.quickfield.com.
14. S. Kremmer, C. Teichert, F. Kuchar, in: Proceedings of the First IEEE Conference on Nanotechnology, Maui, Hawaii, 2001, p. 162.
15. Fontaine P.A., Dubois E., Stiévenard D. J. Appl. Phys. 84:1998;1776.