Conducting atomic force microscopy studies for reliability evaluation of ultrathin SiOz films

IEEE International Integrated Reliability Workshop Final Report

Volumn 2002-January, Issue , 2002, Pages 21-28

  Benstetter, Guenther ^a   Frammelsberger, Wemer ^a,c   Schweinboeck, Thomas ^b   Stamp, Richard J ^c   Kiely, Janice ^c  

^a DEGGENDORF INSTITUTE OF TECHNOLOGY   (Germany)

^b INFINEON TECHNOLOGIES AG   (Germany)

^c UNIVERSITY OF THE WEST OF ENGLAND   (United Kingdom)

Author keywords

AFM; C AFM; Conductive tip; Direct tunnelling; Fowler nordheim tunnelling; IC AFM; Nano mark; Orientation mark; Overlay; Reliability; Silicon dioxide

Indexed keywords

ANODIC OXIDATION; CONDUCTIVE FILMS; INTEGRATED CIRCUITS; MAPPING; RELIABILITY ANALYSIS; SILICA; SILICON OXIDES; TIMING CIRCUITS; TOPOGRAPHY; ULTRATHIN FILMS;

AFM; ATOMIC-FORCE-MICROSCOPY; CONDUCTING AFM; CONDUCTIVE TIPS; DIRECT TUNNELING; FOWLER-NORDHEIM TUNNELING; INTERMITTENT CONTACT AFM; INTERMITTENT-CONTACTS; NANO MARKS; ORIENTATION MARK; OVERLAY;

ATOMIC FORCE MICROSCOPY;

EID: 30344458748     PISSN: 19308841     EISSN: 23748036     Source Type: Conference Proceeding    
DOI: 10.1109/IRWS.2002.1194226     Document Type: Conference Paper

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