Local electrical characteristics of ultra-thin SiO2 films formed on Si(0 0 1) surfaces

Surface Science

Volumn 493, Issue 1-3, 2001, Pages 653-658

  Ikeda, Hiroya ^a   Kurumado, Norihiro ^a   Ohmori, Kenji ^a   Sakashita, Mitsuo ^a   Sakai, Akira ^a   Zaima, Shigeaki ^a   Yasuda, Yukio ^a  

^a NAGOYA UNIVERSITY   (Japan)

Author keywords

Atomic force microscopy; Dielectric phenomena; Insulating films; Oxidation; Silicon oxides

Indexed keywords

ATOMIC FORCE MICROSCOPY; CURRENT VOLTAGE CHARACTERISTICS; ELECTRIC FIELD EFFECTS; ELECTRON ENERGY LEVELS; ELECTRON TUNNELING; LEAKAGE CURRENTS; OXIDATION; SEMICONDUCTING SILICON; SILICA; SUBSTRATES;

DIELECTRIC PHENOMENA; INSULATING FILMS;

ULTRATHIN FILMS;

EID: 0035500877     PISSN: 00396028     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0039-6028(01)01278-X     Document Type: Conference Paper

References (15)