Characterization of thin and ultra-thin SiO2 films and SiO 2/Si interfaces with combined conducting and topographic atomic force microscopy

Microelectronics Reliability

Volumn 43, Issue 9-11, 2003, Pages 1465-1470

  Frammelsberger, Werner ^a,c,d   Benstetter, Guenther ^a,d   Schweinboeck, Thomas ^b   Stamp, Richard J ^c   Kiely, Janice ^c  

^a DEGGENDORF INSTITUTE OF TECHNOLOGY   (Germany)

^b INFINEON TECHNOLOGIES AG   (Germany)

^c UNIVERSITY OF THE WEST OF ENGLAND   (United Kingdom)

^d NONE   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

ATOMIC FORCE MICROSCOPY; ELECTRIC CURRENTS; ELECTRON TUNNELING; IMAGING TECHNIQUES; INTERFACES (MATERIALS); MOS DEVICES; SILICA;

OXIDE FILMS;

ULTRATHIN FILMS;

EID: 0043195583     PISSN: 00262714     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0026-2714(03)00260-9     Document Type: Conference Paper

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