Advanced Analysis of Thin and Ultrathin SiO2 Films and SiO2/Si Interfaces with combined Atomic Force Microscopy Methods

Conference Proceedings from the International Symposium for Testing and Failure Analysis

Volumn 2003-November, Issue , 2003, Pages 406-412

  Frammelsberger, Werner ^a,c   Benstetter, Guenther ^a   Schweinboeck, Thomas ^b   Stamp, Richard ^c   Kiely, Janice ^c  

^a DEGGENDORF INSTITUTE OF TECHNOLOGY   (Germany)

^b INFINEON TECHNOLOGIES AG   (Germany)

^c UNIVERSITY OF THE WEST OF ENGLAND   (United Kingdom)

Author keywords

[No Author keywords available]

Indexed keywords

ATOMIC FORCE MICROSCOPY; MORPHOLOGY; ULTRATHIN FILMS;

ADVANCED ANALYSIS; ATOMIC-FORCE-MICROSCOPY; CONDUCTIVE ATOMIC FORCE MICROSCOPY; HIGH-LATERAL RESOLUTION; INTERFACE MORPHOLOGIES; INTERMITTENT-CONTACTS; SIO2 FILM; SIO2-SI INTERFACE; TUNNELING CURRENT; ULTRA-THIN;

SILICA;

EID: 85061689334     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.31399/asm.cp.istfa2003p0406     Document Type: Conference Paper

References (18)

1. Martin A., O'Sullivan P., Mathewson A., Dielectric Reliability measurement methods: A Review, Microelectronics Reliability 38 (1), 37-72, 1998
2. Suné J., Mura G., Miranda E., Are Soft and Hard Breakdown of Ultrathin Gate Oxides Actually Different Failure Mechanisms, IEEE Electron Device Letters 21(4), 167-169, 2000
3. Ruprecht M. W., Benstetter G., Hunt D. B., Benstetter G., Hunt D. B., A review of ULSI failure analysis techniques for DRAMs. Part II: Defect isolation and visualization, Microelectronics Reliability 43, 17-41, 2003
4. A. Olbrich, B. Ebersberger, C. Boit, Conducting atomic force microscopy for nanoscale electrical characterisazion of thin Sio2, Applied Physics Letters 73(21), 3114-3116, 1998
5. A. Olbrich, B. Ebersberger, C. Boit, Nanoscale Electrical Characterization of Thin Oxides with Conducting Atomic Force Microscopy, 36th Annual IEEE International Reliability Physics Symposium Proceedings, Reno, Nevada, 163-168, 1998
6. M. Porti, M. Nafria, X. Aymerich, A. Olbrich, B. Ebersberger, Nanoscale observations of the electrical conduction of ultrathin SiO2 films with conducting atomic force microscopy, 39th Annual IEEE International Reliability Physics Symposium Proceedings, Orland, Florida, 156-162, 2001
7. M. Porti, M. Nafria, X. Aymerich, A. Olbrich, B. Ebersberger, Nanometer-scale electrical characterisation of stressed ultrathin SiO2 films using conducting atomic force microscopy, Applied Physics Letters 78(26), 4181-4183, 2001
8. G. Benstetter, W. Frammelsberger, T. Schweinböck, R. J. Stamp, J. Kiely, Conducting Atomic Force Microscopy Studies of for Reliability evaluation of Ultrathin SiO2 Films, IEEE International Integrated Reliability Workshop, Final report, Lake Tahoe-California-USA, 2002
9. W. Frammelsberger, G. Benstetter, T. Schweinböck, R. J. Stamp, J. Kiely, Characterisation of thin and Ultra-thin SiO2 films and SiO2/Si interfaces with combined conducting and topographic atomic force microscopy, European Symposium on Reliability of Electron Devices, Failure Physics and Analysis, Arcachon- France, 2003, accepted
10. W. Frammelsberger, G. Benstetter, R. J. Stamp, J. Kiely, Combined AFM Methods to Improve Reliability Investigations of Thin Oxides, IEEE International Integrated Reliability Workshop, Final report, Lake Tahoe-California-USA
11. A Practical Guide to Scanning Probe Microscopy, http://phase.e-technik.tu-ilmenau.de/spm_guide/contents.htm
12. IV-manager software by A. Olbrich, edited by T. Schweinböck (project manager), P. Breitschopf (programming), W. Frammelsberger (technique)
13. Shuegraf K. F., Hu C., Hole Injection SiO2 Breakdown Model for Very Low Voltage Lifetime Extrapolation, IEEE Transaction on Electron Devices 41(5), 1994
14. W. Frammelsberger, G. Benstetter, T. Schweinböck, R. J. Stamp, J. Kiely, Simplified tunnelling current calculation for ultra-thin oxides in MOS structures, 2003, to be published
15. T. Hori, Gate Dielectrics and MOS ULSs: Principles, Technologies and Applications, Springer, Berlin, 1997
16. Ikeda H., Kurumado N., Ohmori K., Sakashita M., Sakai A., Zaima S., Yasuada Y., Local electrical characterisation of ultrathin SiO2 films formed on Si(001) surfaces, Surface Science 493, 653-658, 2001
17. Hasunuma R., Ando A., Miki K., Nishioka Y., Analysis on electrical properties of ultrathin SiO2/Si(111) interfaces with an atomic force microscope, Applied Surface Science 162 - 163, 547-552, 2000
18. Weinberg Z. A., On tunneling in metal-oxide-silicon structures, Journal of Applied Physics 53 (7), 5052-5056, 1982