Critical discussion of the front-back gate coupling effect on the low-frequency noise in fully depleted SOI MOSFETs

IEEE Transactions on Electron Devices

Volumn 51, Issue 6, 2004, Pages 1008-1016

  Simoen, Eddy ^a   Mercha, Abdelkarim ^a   Claeys, Cor ^a,b   Lukyanchikova, Nataliya ^c   Garbar, Nikolay ^c  

^a IMEC   (Belgium)

^b UNIVERSITY OF LEUVEN   (Belgium)

^c INSTITUTE OF SEMICONDUCTOR PHYSICS   (Ukraine)

Author keywords

Fully depleted (FD) MOSFET; Low frequency (LF) noise; Silicon on insulator (SOI)

Indexed keywords

CMOS INTEGRATED CIRCUITS; GATES (TRANSISTOR); SILICON ON INSULATOR TECHNOLOGY; SPURIOUS SIGNAL NOISE;

FRONT BACK GATE COUPLING EFFECT; LOW FREQUENCY NOISE;

MOSFET DEVICES;

EID: 2942661718     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/TED.2004.828159     Document Type: Article

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