Current drive improvement using enhanced body effect factor due to finite inversion layer thickness in variable-threshold-voltage complementary MOS (VTCMOS)

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 42, Issue 4 B, 2003, Pages 1988-1992

  Nagumo, Toshiharu ^a   Hiramoto, Toshiro ^a  

^a INSTITUTE OF INDUSTRIAL SCIENCE   (Japan)

Author keywords

Body effect; Finite inversion layer thickness; Gate depletion; Metal oxide semiconductor field effect transistor (MOSFET); Quantum effect; Variable threshold voltage complementary metal oxide semiconductor (VTCMOS)

Indexed keywords

CMOS INTEGRATED CIRCUITS; ELECTRIC FIELD EFFECTS; LSI CIRCUITS; QUANTUM THEORY; SILICON ON INSULATOR TECHNOLOGY; THICKNESS MEASUREMENT; THRESHOLD VOLTAGE;

ENHANCED BODY EFFECT FACTOR; FINITE INVERSION LAYER THICKNESS; VARIABLE THRESHOLD VOLTAGE COMPLEMENTARY MOS;

MOS DEVICES;

EID: 0038009950     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.42.1988     Document Type: Article

References (7)

1. S. Takagi, M. Takayanagi and A. Toriumi: IEEE Trans. Electron Devices 47 (2000) 999.
2. T. Kuroda, T. Fujita, S. Mita, T. Nagamatsu, S. Yoshioka, K. Suzuki, F. Sano, M. Norishima, M. Murota, M. Kako, M. Kinugawa, M. Kakumu and T. Sakurai: IEEE J. Solid-State Circuits 31 (1996) 770.
3. T. Hiramoto and M. Takamiya: IEICE Trans. Electron. E83-C (2000) 161.
4. T. Hiramoto M. Takamiya, H. Koura, T. Inukai, H. Gomyo, H. Kawaguchi and T. Sakurai: Jpn. J. Appl. Phys. 40 (2001) 2854.
5. H. Komatsu, H. Nakayama, K. Koyama, K. Matsumoto, T. Ohno and K. Takeshita: Proc. 2001 IEEE Int. SOI Conf. (2001) p. 23.
6. Medici Ver. 4.1, Avant! Corp., July 1998.
7. T. Hiramoto, T. Saito and T. Nagumo: Ext. Abstr. 2002 Int. Conf. Solid State Devices and Materials, Nagoya, 2002 (Business Center for Academic Societies Japan, Tokyo, 2002) p. 780.