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Volumn 43, Issue 2, 2003, Pages 243-248

Low frequency noise in 0.12 μm partially and fully depleted SOI technology

Author keywords

[No Author keywords available]

Indexed keywords

CMOS INTEGRATED CIRCUITS; ELECTRIC CURRENTS; SPURIOUS SIGNAL NOISE; THRESHOLD VOLTAGE;

EID: 0037301827     PISSN: 00262714     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0026-2714(02)00279-2     Document Type: Conference Paper
Times cited : (14)

References (17)
  • 1
    • 0035158912 scopus 로고    scopus 로고
    • Advantages and challenges of high performance CMOS on SOI
    • Proceedings, Durango (Colorado), Oct
    • Pelella MM et al. Advantages and challenges of high performance CMOS on SOI, IEEE Int. SOI Conference, Proceedings, Durango (Colorado), Oct 2001. p. 1-4.
    • (2001) IEEE Int. SOI Conference , pp. 1-4
    • Pelella, M.M.1
  • 2
    • 84907896308 scopus 로고    scopus 로고
    • Mainstreaming of the SOI technology
    • Proceedings, Leuven, September
    • Shahidi G. Mainstreaming of the SOI technology. In: ESSDERC'1999, Proceedings, Leuven, September 1999. p. 3-10.
    • (1999) ESSDERC'1999 , pp. 3-10
    • Shahidi, G.1
  • 3
    • 0032677504 scopus 로고    scopus 로고
    • Performance and physical mechanisms in deep submicron SOI MOSFETs
    • Balestra F. Performance and physical mechanisms in deep submicron SOI MOSFETs. Electron. Technol. 32(1/2):1999;50-62.
    • (1999) Electron. Technol. , vol.32 , Issue.1-2 , pp. 50-62
    • Balestra, F.1
  • 4
    • 0020830319 scopus 로고
    • Threshold voltage of thin-film silicon-on-insulator (SOI) MOSFETs
    • Lim H.K., Fossum J.G. Threshold voltage of thin-film silicon-on-insulator (SOI) MOSFETs. IEEE Trans. Electron. Dev. 30(10):1983;1244-1251.
    • (1983) IEEE Trans Electron Dev , vol.30 , Issue.10 , pp. 1244-1251
    • Lim, H.K.1    Fossum, J.G.2
  • 5
    • 0034470989 scopus 로고    scopus 로고
    • Comparative low-frequency noise analysis in various SOI devices: Floating body, body-tied, DTMOS with and without current limiter
    • Proceedings, Wakefield, Massachusetts, Oct
    • Haendler S et al. Comparative low-frequency noise analysis in various SOI devices: floating body, body-tied, DTMOS with and without current limiter. In: IEEE Int. SOI Conference, Proceedings, Wakefield, Massachusetts, Oct 2000. p. 126-7.
    • (2000) IEEE Int. SOI Conference , pp. 126-127
    • Haendler, S.1
  • 6
    • 0012650003 scopus 로고    scopus 로고
    • On the 1/f noise in fully depleted SOI transistors
    • Proceedings, Gainesville, Florida, Oct
    • Haendler S et al. On the 1/ f noise in fully depleted SOI transistors. In: ICNF'2001, Proceedings, Gainesville, Florida, Oct 2001. p. 133-6.
    • (2001) ICNF'2001 , pp. 133-136
    • Haendler, S.1
  • 7
    • 0012653331 scopus 로고    scopus 로고
    • Shrinking from 0.25 down to 0.12 μ m SOI CMOS technology node: A contribution to 1/f noise in partially depleted N-MOSFETs
    • Proceedings, München, March
    • Dieudonné F et al. Shrinking from 0.25 down to 0.12 μ m SOI CMOS technology node: a contribution to 1/ f noise in partially depleted N-MOSFETs. In: ULIS'2002, Proceedings, München, March 2002. p. 33-6.
    • (2002) ULIS'2002 , pp. 33-36
    • Dieudonné, F.1
  • 8
    • 0030193606 scopus 로고    scopus 로고
    • The low frequency noise behaviour of SOI technologies
    • Simoen E., Claeys C. The low frequency noise behaviour of SOI technologies. Solid State Electron. 39:1996;949-960.
    • (1996) Solid State Electron. , vol.39 , pp. 949-960
    • Simoen, E.1    Claeys, C.2
  • 9
    • 0033723901 scopus 로고    scopus 로고
    • Kink-related excess noise in deep submicron partially depleted and moderately fully depleted unibond N-MOSFETs
    • Haendler S. et al. Kink-related excess noise in deep submicron partially depleted and moderately fully depleted unibond N-MOSFETs. Jpn. J. Appl. Phys. 39:2000;2261-2263.
    • (2000) Jpn J Appl Phys , vol.39 , pp. 2261-2263
    • Haendler, S.1
  • 10
    • 0026123576 scopus 로고
    • Polysilicon encapsulated local oxidation
    • Roth S.S. et al. Polysilicon encapsulated local oxidation. IEEE Electron. Dev. Lett. 12(3):1991;92-94.
    • (1991) IEEE Electron Dev Lett , vol.12 , Issue.3 , pp. 92-94
    • Roth, S.S.1
  • 12
    • 49949124297 scopus 로고
    • Low-frequency noise in MOS transistors
    • Christensson S. et al. Low-frequency noise in MOS transistors. Solid State Electron. 11:1968;797-812.
    • (1968) Solid State Electron , vol.11 , pp. 797-812
    • Christensson, S.1
  • 13
    • 0035310696 scopus 로고    scopus 로고
    • Low-frequency noise in thin gate oxide MOSFETs
    • Kolarova R. et al. Low-frequency noise in thin gate oxide MOSFETs. Microelectron. Reliab. 41:2000;579-585.
    • (2000) Microelectron. Reliab. , vol.41 , pp. 579-585
    • Kolarova, R.1
  • 14
    • 0028397668 scopus 로고
    • The Kink-related excess low frequency noise in silicon-on-insulator MOSFETs
    • Simoen E. et al. The Kink-related excess low frequency noise in silicon-on-insulator MOSFETs. IEEE Trans Electron. Dev. 41(3):1994;330-339.
    • (1994) IEEE Trans Electron Dev , vol.41 , Issue.3 , pp. 330-339
    • Simoen, E.1
  • 15
    • 0032760793 scopus 로고    scopus 로고
    • Temperature-dependent Kink effect model for partially depleted SOI NMOS devices
    • Lin S.C., Kuo J.B. Temperature-dependent Kink effect model for partially depleted SOI NMOS devices. IEEE Trans. Electron. Dev. 46(1):1999;254-258.
    • (1999) IEEE Trans Electron Dev , vol.46 , Issue.1 , pp. 254-258
    • Lin, S.C.1    Kuo, J.B.2
  • 16
    • 0026938662 scopus 로고
    • 1/f noise in series resistance of LDD MOSTs
    • Li X., Vandamme L.K.J. 1/f noise in series resistance of LDD MOSTs Solid. State. Electron. 35(10):1992;1471-1475.
    • (1992) Solid State Electron , vol.35 , Issue.10 , pp. 1471-1475
    • Li, X.1    Vandamme, L.K.J.2
  • 17
    • 4243352485 scopus 로고
    • Surface mobility fluctuations in metal-oxide-semiconductor field-effect transistors
    • Surya C., Hsiang T.Y. Surface mobility fluctuations in metal-oxide-semiconductor field-effect transistors. Phys. Rev. B. 35(10):1987;1471-1475.
    • (1987) Phys Rev B , vol.35 , Issue.10 , pp. 1471-1475
    • Surya, C.1    Hsiang, T.Y.2


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.