Future electron devices and SOI technology - Semi-planar SOI MOSFETs with sufficient body effect

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 42, Issue 4 B, 2003, Pages 1975-1978

  Hiramoto, Toshiro ^a   Saito, Toshiki ^a   Nagumo, Toshiharu ^a  

^a INSTITUTE OF INDUSTRIAL SCIENCE   (Japan)

Author keywords

Body effect factor; Double gate MOSFET; FinFET; Short channel effect; Silicon on insulator (SOI); Subthreshold factor; Threshold voltage fluctuations

Indexed keywords

ASPECT RATIO; COMPUTER SIMULATION; ELECTRON DEVICES; MOSFET DEVICES; SEMICONDUCTOR DEVICE STRUCTURES; SUBSTRATES; THRESHOLD VOLTAGE; VLSI CIRCUITS;

BODY EFFECT FACTOR; DOUBLE GATE MOSFET; SUBTHRESHOLD FACTOR; THRESHOLD VOLTAGE FLUCTUATIONS;

SILICON ON INSULATOR TECHNOLOGY;

EID: 0038009953     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.42.1975     Document Type: Article

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