SCOPUS 정보 검색 플랫폼

Journal of Vacuum Science and Technology, Part A: Vacuum, Surfaces and Films

Volumn 20, Issue 1, 2002, Pages 132-137

Plasma etching of cesium iodide

(5) Yang, X a Hopwood, J a Tipnis, S b Nagarkar, V b Gaysinskiy, V b

a Northeastern University (United States)

b RADIATION MONITORING DEVICES INC (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ACTIVATION ENERGY; ANISOTROPY; ARGON; CESIUM COMPOUNDS; FLUORINE; FLUOROCARBONS; ION BOMBARDMENT; PASSIVATION; PLASMA ETCHING; SCANNING ELECTRON MICROSCOPY; SUBSTRATES; THERMAL EFFECTS;

ANISOTROPIC ETCHING; ARRHENIUS-TYPE BEHAVIOUR; CESIUM IODIDE; ELECTRONIC SPUTTERING; ETCH RATE; HIGH-DENSITY INDUCTIVELY COUPLED PLASMA; IMAGE RESOLUTION; ION-ENHANCED INHIBITOR ETCHING; PASSIVATION LAYER; TEMPERATURE DEPENDENCE;

THICK FILMS;

EID: 0036160357 PISSN: 07342101 EISSN: None Source Type: Journal
DOI: 10.1116/1.1426363 Document Type: Article

Times cited : (4)

References (17)

1
- 0035353524
- (2001) IEEE Spectrum , vol.38 , pp. 50
- Moore, S.K.¹

2
- 0008194583
- (unpublished)
- (1997) Proceedings of the IEEE Nuclear Science Symposium, San Francisco, CA, November
- Nagarkar, V.V.¹ Gupta, T.K.² Miller, S.³ Klugarman, Y.⁴ Squillante, M.R.⁵ Entine, G.⁶

3
- 0008230543
- (1985) Adv. Electron. Electron Phys. , vol.74 , pp. 247
- Oba, K.¹ Ito, M.² Yamaguchi, M.³ Tanaka, M.⁴

4
- 0008272288
- (1985) Adv. Electron. Electron Phys. , vol.74 , pp. 315
- Fouassier, M.¹ Duchenois, V.² Dietz, J.³ Guillemet, E.⁴ Lemonier, M.⁵

5
- 0001660662
- (1989) J. Vac. Sci. Technol. B , vol.7 , pp. 1832
- Deckman, H.W.¹ Dunsmuir, J.H.² Gruner, S.M.³

6
- 0025383222
- and references therein
- (1990) Nucl. Instrum. Methods Phys. Res. B , vol.46 , pp. 427
- Syzmonski, M.¹

7
- 0000800742
- (1996) J. Vac. Sci. Technol. B , vol.14 , pp. 732
- Forgotson, N.¹ Khemka, V.² Hopwood, J.³

8
- 0003730831
- (Wiley, New York)
- (1994) Principles of Plasma Discharges and Materials Processing , pp. 306
- Lieberman, M.A.¹ Lichtenberg, A.J.²

9
- 84975606485
- (1991) Appl. Opt. , vol.30 , pp. 1221
- Saenger, K.L.¹ Gupta, J.²

10
- 0031189218
- (1997) J. Vac. Sci. Technol. A , vol.15 , pp. 1881
- Rueger, N.R.¹ Beulens, J.J.² Schaepkens, M.³ Doemling, M.F.⁴ Miraz, J.M.⁵ Standaert, T.E.F.M.⁶ Oehrlein, G.S.⁷

11
- 21344499352
- (1994) J. Vac. Sci. Technol. A , vol.12 , pp. 323
- Oehrlein, G.S.¹ Zhang, Y.² Vender, D.³ Haverlag, M.⁴

12
- 84881155372
- (1994) J. Vac. Sci. Technol. A , vol.12 , pp. 333
- Oehrlein, G.S.¹ Zhang, Y.² Vender, D.³ Joubert, O.⁴

13
- 0003730831
- (Wiley, New York)
- (1994) Principles of Plasma Discharges and Materials Processing
- Lieberman, M.A.¹ Lichtenberg, A.J.²

14
- 0012393058
- edited by D. M. Manos and D. L. Flamm (Academic, Boston, MA); Chap. 1
- (1989) Plasma Etching, an Introduction , pp. 19
- Flamm, D.L.¹ Herb, G.K.²

15
- 0001442869
- (1989) Appl. Phys. Lett. , vol.55 , pp. 1960
- Steinbruchel, C.¹

16
- 0012393058
- edited by D. M. Manos and D. L. Flamm (Academic, Boston, MA); Chap. 2
- (1989) Plasma Etching, an Introduction
- Flamm, D.L.¹

17
- 0001148677
- (1976) Nucl. Instrum. Methods , vol.132 , pp. 229
- Biersack, J.P.¹ Santner, E.²

* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.