Investigation of SrBi2Ta2O9 thin films etching mechanisms in Cl2/Ar plasma

Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films

Volumn 21, Issue 4, 2003, Pages 1017-1023

  Efremov, A M ^a,b   Kim, D P ^a   Kim, C I ^a  

^a Chung Ang University   (South Korea)

^b IVANOVO STATE UNIVERSITY OF CHEMISTRY AND TECHNOLOGY   (Russian Federation)

Author keywords

[No Author keywords available]

Indexed keywords

ARGON; CARRIER CONCENTRATION; CHLORINE COMPOUNDS; ION BOMBARDMENT; MATHEMATICAL MODELS; MIXING; PLASMA ETCHING; POSITIVE IONS; REACTION KINETICS; SPUTTERING; THIN FILMS;

ELECTRON TEMPERATURE; INPUT POWER CONDITIONS; STRONTIUM BISMUTH TANTALATE; VOLUME KINETICS;

STRONTIUM COMPOUNDS;

EID: 0043032583     PISSN: 07342101     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.1582454     Document Type: Article

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