Deposition and characterization of silicon oxynitride for integrated optical applications

Journal of Non-Crystalline Solids

Volumn 338-340, Issue 1 SPEC. ISS., 2004, Pages 76-80

  Alayo, M I ^a   Criado, D ^a   Goncalves L C D ^a   Pereyra, I ^a  

^a UNIVERSITY OF SÃO PAULO   (Brazil)

Author keywords

[No Author keywords available]

Indexed keywords

DEGREES OF FREEDOM (MECHANICS); DEPOSITION; ELECTROMAGNETIC WAVES; LIGHT ABSORPTION; MICROELECTRONICS; PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION; PLASMA ETCHING; REFRACTIVE INDEX; RESIDUAL STRESSES; RUTHERFORD BACKSCATTERING SPECTROSCOPY; STOICHIOMETRY; THICK FILMS;

DEPOSITION RATES; GROWTH PARAMETERS; PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION (PECVD);

SILICON COMPOUNDS;

EID: 2942538183     PISSN: 00223093     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jnoncrysol.2004.02.025     Document Type: Conference Paper

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