Properties of SiOxNy films deposited by LPCVD from SiH4/N2O/NH3 gaseous mixture

Sensors and Actuators, A: Physical

Volumn 74, Issue 1, 1999, Pages 52-55

  Temple Boyer, P ^a   Hajji, B ^a   Alay, J L ^b   Morante, J R ^b   Martinez, A ^c  

^a LAAS CNRS   (France)

^b UNIVERSITY OF BARCELONA   (Spain)

^c NONE

Author keywords

[No Author keywords available]

Indexed keywords

AMMONIA; CHEMICAL VAPOR DEPOSITION; ELLIPSOMETRY; MECHANICAL PROPERTIES; REFRACTIVE INDEX; SILICON NITRIDE; STOICHIOMETRY; X RAY PHOTOELECTRON SPECTROSCOPY;

LOW PRESSURE CHEMICAL VAPOUR DEPOSITION; SILICON OXYNITRIDE; STRUCTURAL PROPERTIES;

MICROELECTROMECHANICAL DEVICES;

EID: 0032625817     PISSN: 09244247     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0924-4247(98)00344-6     Document Type: Article

References (13)

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