Ultra-thin gate dielectrics prepared by low-temperature remote plasma-assisted oxidation

Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms

Volumn 127-128, Issue , 1997, Pages 364-368

  Niimi, H ^a   Koh, K ^a   Lucovsky, G ^a  

^a NORTH CAROLINA STATE UNIVERSITY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

INTERFACES (MATERIALS); NITROGEN OXIDES; OXIDATION; OXYGEN; PLASMA APPLICATIONS; REACTION KINETICS; SEMICONDUCTING SILICON; ULTRATHIN FILMS;

NITROGEN ATOM DEPLETION REACTIONS; PLASMA ASSISTED OXIDATION; ULTRATHIN GATE OXIDES;

DIELECTRIC FILMS;

EID: 0031547927     PISSN: 0168583X     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0168-583X(96)00958-5     Document Type: Article

References (20)

1. H. Hwang, W. Ting, D.-L. Kwong and J. Lee, IEEE Electron Device Lett. EDL-12 (1991) 495.
2. H. Fukuda, M. Yasuda, T. Iwabuchi and S. Ohno, IEEE Electron Device Lett. EDL-12 (1991) 587.
3. E.C. Carr and R.A. Buhrman, Appl. Phys. Lett. 63 (1993) 54.
4. A. Uchiyama, H. Fukuda, T. Hayashi, T. Iwabuchi and S. Ohno, IEDM Tech. Dig. 425 (1990).
5. T. Morimoto, H.S. Momose, Y. Ozawa, K. Yamabe and H. Iwai, IEDM Tech. Dig. 429 (1990).
6. J.S. Cable, R.A. Mann and J.C.S. Woo, IEEE Electron Device Lett. EDL-12 (1991) 128.
7. T. Ito, T. Nozaki and H. Ishikawa, J. Electrochem. Soc. 127 (1980) 2053.
8. M.L. Naiman, F.L. Terry, J.A. Bums, J.I. Raffel and R. Aucoin, IEDM Tech. Dig. 562 (1980).
9. T. Hori and H. Iwasaki, IEDM Tech. Dig. 459 (1989).
10. W. Ting, G.Q. Lo, J. Ahn, T.Y. Chu and D.-L. Kwong, IEEE Electron Device Lett. EDL-12 (1991) 416.
11. Z.H. Liu, J.T. Krick, H.J. Wann, P.K. Ko, C. Hu and Y.C. Cheng, IEDM Tech. Dig. 625 (1992).
12. M. Bhat, J. Kim, J. Yan, G.W. Yoon, K.L. Han and D.-L. Kwong, SSDM Ext. Abstracts 862 (1994).
13. H. Hwang, W. Ting, B. Maiti, D.-L. Kwong and J. Lee, Appl. Phys. Lett. 57 (1990) 1010.
14. W. Ting, H. Hwang, J. Lee and D.-L. Kwong, Appl. Phys. Lett. 57 (1990) 2808.
15. Z.-Q. Yao, H.B. Harrison, S. Dimitrijev, D. Sweatman and Y.T. Yeow, Appl. Phys. Lett. 64 (1994) 3584.
16. Z.-Q. Yao, H.B. Harrison, S. Dimitrijev and Y.T. Yeow, IEEE Electron Device Lett. EDL-15 (1994) 516.
17. D.R. Lee, G. Lucovsky, M.S. Denker and C. Magee, J. Vac. Sci. Technol. A 13 (1995) 1671.
18. D.R. Lee, C.G. Parker, J. Hauser and G. Lucovsky, J. Vac. Sci. Technol. B 13 (1995) 1778.
19. A. Reisman, E.H. Nicollian, K.C. Williams and C.J. Merz, J. Electronic Mat. 16 (1987) 45.
20. N.S. Saks, D.I. Ma and W.B. Fowler, Appl. Phys. Lett. 67 (1995) 374.