Analytical model of 6H-SiC MOSFET

Microelectronic Engineering

Volumn 65, Issue 4, 2003, Pages 416-427

  Kumar, Anil ^a   Kaushik, Navneet ^a   Haldar, Subhasis ^b   Gupta, Mridula ^a   Gupta, R S ^a  

^a UNIVERSITY OF DELHI   (India)

^b UNIVERSITY OF DELHI   (India)

Author keywords

6H SiC; I V characteristics; Ionization; MOSFET

Indexed keywords

HIGH TEMPERATURE APPLICATIONS; INTERFACES (MATERIALS); IONIZATION; SILICON CARBIDE; TRANSCONDUCTANCE;

DRAIN CURRENT;

MOSFET DEVICES;

EID: 0037623282     PISSN: 01679317     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0167-9317(03)00053-4     Document Type: Article

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