A relationship between interface trap density and transconductance in 6H-SiC enhancement mode field-effect transistors

Solid-State Electronics

Volumn 39, Issue 9, 1996, Pages 1331-1335

  Dryfuse, M W ^a   Tabib Azar, M ^a  

^a CASE WESTERN RESERVE UNIVERSITY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CALCULATIONS; CURRENT DENSITY; ELECTRIC FIELD EFFECTS; ESTIMATION; FERMI LEVEL; INTERFACES (MATERIALS); SILICON CARBIDE; TRANSCONDUCTANCE;

ENERGY DISTRIBUTION; INTERFACE STATES; INTERFACE TRAP DENSITY;

MOSFET DEVICES;

EID: 0030242391     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/0038-1101(96)00035-4     Document Type: Review

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