Extraction technique for characterization of electric field distribution and drain current in VDMOS power transistor

Microelectronics Journal

Volumn 34, Issue 1, 2003, Pages 77-83

  Kaushik, N ^a   Kranti, A ^a   Gupta, M ^a   Gupta, R S ^a  

^a UNIVERSITY OF DELHI   (India)

Author keywords

Cell spacing; Drain current; Electric field distribution; Power MOSFET; Quasi saturation; Silicon VDMOS

Indexed keywords

COMPUTER SIMULATION; ELECTRIC CURRENTS; ELECTRIC FIELDS; ELECTRIC POTENTIAL; MICROELECTRONICS;

DRAIN CURRENTS;

MOSFET DEVICES;

EID: 0037238952     PISSN: 00262692     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0026-2692(02)00140-4     Document Type: Conference Paper

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