An analytical model for SiC MESFETs

Solid-State Electronics

Volumn 46, Issue 10, 2002, Pages 1495-1505

  Murray, S P ^a,b   Roenker, K P ^b  

^a Xetron Corporation   (United States)

^b University of Cincinnati   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CAPACITANCE; CARRIER MOBILITY; COMPUTER SIMULATION; CURRENT VOLTAGE CHARACTERISTICS; ELECTRIC CONDUCTANCE; MATHEMATICAL MODELS; SILICON CARBIDE; TRANSCONDUCTANCE;

CHARGE DISTRIBUTIONS;

MESFET DEVICES;

EID: 0036779117     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0038-1101(02)00094-1     Document Type: Article

References (14)

1. SiC for applications in high-power transistors
2. Status of silicon carbide (SiC) as a wide-bandgap semiconductor for high-temperature applications: A review
3. Progress in use of 4H-SiC semi-insulating wafers for microwave power MESFETs
4. Determining 4H silicon carbide electronic properties through combined use of device simulation and metal-semiconductor field-effect-transistor terminal characteristics
5. The effect of different transport models in simulation of high frequency 4H-SiC and 6H-SiC vertical MESFETs
6. Silicon carbide microwave field effect transistor: Effect of field dependent mobility
7. Analytic theory for current-voltage characteristics and field distribution of GaAs MESFETs
8. An analytic model for HEMTs using new velocity-field dependence
9. Electron mobility models for 4H, 6H and 3C SiC
10. Carrier mobilities in silicon empirically related to doping and field
11. Measurement of high-field electron transport in silicon carbide
12. Comparison of 3C-SiC, 6H-SiC and 4H-SiC MESFET performance