Characterization of interface traps in the subthreshold region of implanted 4H and 6H-SiC MOSFETs

Solid-State Electronics

Volumn 46, Issue 10, 2002, Pages 1579-1582

  Zeng, Yu ^a   Softic, Amela ^a   White, Marvin H ^a  

^a LEHIGH UNIVERSITY   (United States)

Author keywords

4H SiC; 6H SiC; Interface trap density; Interface traps; MOSFET; Subthreshold region

Indexed keywords

CHARACTERIZATION; CURRENT VOLTAGE CHARACTERISTICS; ELECTRON TRAPS; FABRICATION; HYDROGEN; INTERFACES (MATERIALS); ION IMPLANTATION; SILICON CARBIDE;

TRAP ENERGY;

MOSFET DEVICES;

EID: 0036779129     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0038-1101(02)00108-9     Document Type: Conference Paper

References (9)

1. Interface states and field-effect mobility in 6H-SiC MOS transistors
2. Characterization of inversion and accumulation layer electron transport in 4H and 6H-SiC MOSFETs on implanted P-type regions
3. 2 interface
4. Effect of interface states on electron transport in 4H-SiC inversion layers
5. Measurement of the interface trap density in SiC MOS devices using the Hall effect
6. Theory of the MOS transistor in weak inversion new method to determine the number of surface states
7. Surface states at steam-grown silicon-silicondioxide interfaces
8. Modeling of transconductance degradation and determination of threshold voltage in thin oxide MOSFETs