Numerical modelling and simulation of non-uniformly doped channel 6H-silicon carbide MOSFET

Semiconductor Science and Technology

Volumn 19, Issue 3, 2004, Pages 373-379

  Kaushik, Navneet ^a   Haldar, Subhasis ^b   Gupta, Mridula ^a   Gupta, R S ^a  

^a UNIVERSITY OF DELHI   (India)

^b UNIVERSITY OF DELHI   (India)

Author keywords

[No Author keywords available]

Indexed keywords

CHARGE-SHEET APPROACH; CURRENT TRANSPORT; DOPANT IMPURITIES; DRAIN CURRENT; FERMI-DIRAC STATISTICS; QUASI-FERMI LEVEL; SURFACE POTENTIAL;

COMPUTER AIDED DESIGN; COMPUTER SIMULATION; ELECTRIC CURRENTS; FERMI LEVEL; IMPURITIES; IONIZATION; SEMICONDUCTOR DEVICE MODELS; SILICON CARBIDE; TRANSCONDUCTANCE;

MOSFET DEVICES;

EID: 1642269053     PISSN: 02681242     EISSN: None     Source Type: Journal    
DOI: 10.1088/0268-1242/19/3/013     Document Type: Article

References (22)

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