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Volumn 88, Issue 1, 2001, Pages 58-66

Characterization of focused ion beam induced deposition process and parameters calibration

Author keywords

[No Author keywords available]

Indexed keywords

DEPOSITION; ENERGY DISPERSIVE SPECTROSCOPY; FAILURE ANALYSIS; INTEGRATED CIRCUIT LAYOUT; ION BEAMS; MICROPROCESSOR CHIPS; SCANNING ELECTRON MICROSCOPY;

EID: 0035120995     PISSN: 09244247     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0924-4247(00)00490-8     Document Type: Article
Times cited : (20)

References (8)
  • 1
    • 0032638771 scopus 로고    scopus 로고
    • A microaccelerometer structure fabricated in silicon-on-insulator using a focused ion beam process
    • Daniel J.H., Moore D.F. A microaccelerometer structure fabricated in silicon-on-insulator using a focused ion beam process. Sens. Actuators. 73:1999;201-209.
    • (1999) Sens. Actuators , vol.73 , pp. 201-209
    • Daniel, J.H.1    Moore, D.F.2
  • 3
    • 0031655072 scopus 로고    scopus 로고
    • Investigation of dwell time effects on the cobalt dislicide formation using focused ion beam implantation
    • Hausmann S., Bischoff L., Teichert J., Grambole D., Herrmann F., Moller W. Investigation of dwell time effects on the cobalt dislicide formation using focused ion beam implantation. Microelectron. Eng. 41/42:1998;233-236.
    • (1998) Microelectron. Eng. , vol.4142 , pp. 233-236
    • Hausmann, S.1    Bischoff, L.2    Teichert, J.3    Grambole, D.4    Herrmann, F.5    Moller, W.6
  • 4
    • 0000951310 scopus 로고    scopus 로고
    • A novel procedure for measuring the absolute current density profile of a focused gallium-ion beam
    • Wang J.B., Wang Y.L. A novel procedure for measuring the absolute current density profile of a focused gallium-ion beam. Appl. Phys. Lett. 69(18):1996;2764.
    • (1996) Appl. Phys. Lett. , vol.69 , Issue.18 , pp. 2764
    • Wang, J.B.1    Wang, Y.L.2
  • 6
    • 0040042967 scopus 로고
    • Focused ion beam direct deposition of superconductive thin film
    • S. Nagamachi, Y Yamakage, M Ueda, Hiromasa, K. Shinada, Focused ion beam direct deposition of superconductive thin film, Appl. Phys. Lett. 65(25), (1994) 3278-3280.
    • (1994) Appl. Phys. Lett. , vol.65 , Issue.25 , pp. 3278-3280
    • Nagamachi, S.1    Yamakage, Y.2    Ueda, M.3    Hiromasa4    Shinada, K.5
  • 8
    • 0001488462 scopus 로고
    • Fabrication of sub-50 nm gate length n-metal-oxide-semiconductor fields effect transistors
    • Puretz J., Swanson L.W. Fabrication of sub-50 nm gate length n-metal-oxide-semiconductor fields effect transistors. J. Vac. Sci. Technol. B. 10(6):1992;2695-2698.
    • (1992) J. Vac. Sci. Technol. B , vol.10 , Issue.6 , pp. 2695-2698
    • Puretz, J.1    Swanson, L.W.2


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.