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Volumn 7, Issue 3, 1996, Pages 247-258

Focused ion beam applications to solid state devices

Author keywords

[No Author keywords available]

Indexed keywords

DEPOSITION; ETCHING; FAILURE ANALYSIS; ION BEAM LITHOGRAPHY; SEMICONDUCTOR DOPING; SOLID STATE DEVICES;

EID: 0030231388     PISSN: 09574484     EISSN: None     Source Type: Journal    
DOI: 10.1088/0957-4484/7/3/013     Document Type: Review
Times cited : (154)

References (112)
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    • Nikawa K, Nasu K, Murase M, Kaito T, Adachi T and Inoue S 1989 Proc. 27th Int. Reliability Physics Symp. 1989 (New York: IEEE) p 43 Nikawa K 1991 J. Vac. Sci. Technol. B 9 2566
    • (1991) J. Vac. Sci. Technol. B , vol.9 , pp. 2566
    • Nikawa, K.1
  • 67
    • 0001041304 scopus 로고
    • Ochiai Y, Shihoyama K, Shiokawa T, Toyoda K, Masumoto A, Gamo K and Namba S 1986 J. Vac. Sci. Technol. B 4 333 Gamo K and Namba S 1990 J. Vac. Sci. Technol. B 8 1927
    • (1990) J. Vac. Sci. Technol. B , vol.8 , pp. 1927
    • Gamo, K.1    Namba, S.2
  • 91
    • 84914323165 scopus 로고
    • Hirayama Y and Okamoto H 1985 Japan. J. Appl. Phys. 24 L965; 1988 J. Vac. Sci. Technol. B 6 1018
    • (1988) J. Vac. Sci. Technol. B , vol.6 , pp. 1018
  • 104
    • 28544437587 scopus 로고
    • Steckl A J, Mogul H C and Morgren S M 1990 J. Vac. Sci. Technol. B 8 1937; 1991 J. Vac. Sci. Technol. B 9 2718
    • (1991) J. Vac. Sci. Technol. B , vol.9 , pp. 2718


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.