Fabrication and properties of dot array using electron-beam-induced deposition

Microelectronic Engineering

Volumn 35, Issue 1-4, 1997, Pages 273-276

  Komuro, M ^a   Hiroshima, H ^a  

^a ELECTROTECHNICAL LABORATORY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC CONDUCTIVITY; ELECTRIC RESISTANCE; ELECTRON BEAMS; MIM DEVICES; NANOTECHNOLOGY; SEMICONDUCTOR JUNCTIONS; SILICA; SUBSTRATES; TRANSISTORS; TUNGSTEN COMPOUNDS;

ELECTRON TRANSPORT DEVICES; OXYGEN PLASMA; SINGLE ELECTRON TRANSISTOR;

ELECTRODEPOSITION;

EID: 0031070345     PISSN: 01679317     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0167-9317(96)00105-0     Document Type: Article

References (3)

1. S. Matsui, T. Ichihashi and M. Mito, J. Vac. Sci. Technol., B7 (1989) 1182.
2. W. P. Koops, J. Kretz, M. Rudolph, M. Weber, G. Dahin, and K. L. Lee, Jpn. J. Appl. Phys., 33 (1994) 7099.
3. M. Komuro, H. Hiroshima, S. Haraichi, K. Ishii, T. Wada, and S. Okayama, Microelec. Eng., 30 (1996) 411.