Saturated voids in interconnect lines due to thermal strains and electromigration

Journal of Applied Physics

Volumn 98, Issue 7, 2005, Pages

  Zhang, Zhen ^a   Suo, Zhigang ^a   He, Jun ^b  

^a HARVARD UNIVERSITY   (United States)

^b INTEL CORPORATION   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

INTERCONNECT LINES; SEMICONDUCTOR CHIPS; THERMAL STRAINS; VOLUME OF A SATURATED VOID (VSV);

ELASTIC MODULI; ELECTRIC CONDUCTORS; HYDROSTATIC PRESSURE; PERMITTIVITY; SEMICONDUCTOR MATERIALS;

ELECTROMIGRATION;

EID: 27144502407     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2061896     Document Type: Article

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