Development of porous SiLK™ semiconductor dielectric resin for the 65 nm and 45 nm nodes

Materials Research Society Symposium - Proceedings

Volumn 766, Issue , 2003, Pages 265-272

  Strillmatter, R J ^a   Hahnfeld, J L ^a   Silvis, H C ^a   Stokich, T M ^a   Perry, J D ^a   Ouellette, K B ^a   Niu, Q J ^a   Godschalx, J P ^a   Kalantar, T H ^a   Mubarekyan, E ^a   Hefner Jr , R E ^a   Lyons, J W ^a   Dominowski, J M ^a   Buske, G R ^a  

^a DOW CHEMICAL COMPANY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CURING; MORPHOLOGY; PERMITTIVITY; PORE SIZE; POROSITY; POROUS MATERIALS; REACTION KINETICS; THERMAL CYCLING; THERMAL EFFECTS;

FILM PROCESSING KINETICS; INTERLAYER DIELECTRIC MATERIAL; PORE MORPHOLOGY;

SEMICONDUCTING FILMS;

EID: 0346308353     PISSN: 02729172     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (13)

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2. H. Tang, S. Rozeveld, E. Beach, J. Blackson, "Transmission Electron Microscopy Study of Porosity and Pore Morphology in Porous Low-k Dielectric Resin," to be published.
3. S. A. Gombar-Fetner, B. Lemon, L. K. Mills, P. H. Townsend, G. T. Wells, J. Waeterloos, L. R. Wilson, "Ensemble Integrated Dielectric Solutions," Sematech Ultra Low-k Workshop, San Francisco, CA, June 2002.
4. Thermal shock testing is described in JEDEC standards JESD22-A106-A.
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6. L. Nicholson, "Characterization of SiLK D for Copper Interconnect Technologies," SiLKnet Alliance Summit, Monterey, CA, April 28 - May 1, 2003.
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8. F. Iacopi, Zs. Tökei, M. Stucchi, S. H. Brongersma, D. Vanhaeren, K. Maex, "Characterization of Porous Structure in Ultra-Low-k Dielectrics by Depositing Thin Conductive Metal Caps," Microelectronic Engineering 65 123-131 (2003).
9. P. G. Clark, J. W. Butterbaugh, G. P. Thomes, J. F. Weygand, T. J. Wagener, "Compatibility of a Cryogenic Aerosol Process on SiLK and Porous MSQ," to be published.
10. C. Tyberg, E. Huang, J. Hedrick, E. Simonyi, S. Gates, S. Cohen, K. Malone, H. Wickland, M. Sankarapandian, M. Toney, H.-C. Kim, R. Miller, W. Volksen, L. Lurio, "Porous Low-k Dielectrics: Material Properties," Am. Chem. Soc. Polymer Materials Science & Engineering 87, 2002.
11. M. Kason, J. Hawkins, S. Wang, M. Simmonds, K. Itchhaporia, G. Meyers, "iCue Cu CMP Technology for Integration of Copper with Developmental Porous SiLK™ Dielectric Films," Sematech Ultra Low-k Workshop, San Francisco, CA, June 2002.
12. S. Terada, T. Kinashi, J. Spear, "Pore Size Distribution Measurement of Porous Low-k Dielectrics Using TR-SAXS," Int'l Conference on Characterization and Metrology for ULSI Technology, Austin, TX, March 2003.
13. Zs. Tökei, F. Iacopi, O. Richard, J. Waeterloos, S. Rozeveld, E. Beach, B. Mebarki, T. Mandrekar, S. Guggilla, K. Maex, "Barrier Studies on porous SiLK Semiconductor Dielectric," Proc. of the Metals and Advanced Metal. Conf, 2003.