Void evolution and its dependence on segment length in Cu interconnects

Journal of Materials Research

Volumn 19, Issue 11, 2004, Pages 3135-3138

  Leon, R ^a   Colon, J A ^b   Evans, K C ^a   Vu, D T ^a   Blaschke, V ^c   Bavarian, B ^b   Ogawa, E T ^d   Ho, P S ^d  

^a CALIFORNIA INSTITUTE OF TECHNOLOGY   (United States)

^b CALIFORNIA STATE UNIVERSITY   (United States)

^c SEMATECH   (United States)

^d UNIVERSITY OF TEXAS AT AUSTIN   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CURRENT DENSITY; ELECTROMIGRATION; ELECTROPLATING; GROWTH (MATERIALS); METALLIZING; MICROSTRUCTURE; NUCLEATION; PHYSICAL VAPOR DEPOSITION; SILICON NITRIDE; SPUTTER DEPOSITION; STRESSES;

COPPER INTERCONNECTS; DRIFT VELOCITY; STRESS MEASUREMENT; VOID EVOLUTION;

COPPER;

EID: 11244346862     PISSN: 08842914     EISSN: None     Source Type: Journal    
DOI: 10.1557/JMR.2004.0408     Document Type: Article

References (10)

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