The effect of interlevel dielectric on the critical tensile stress to void nucleatlon for the reliability of Cu interconnects

Journal of Applied Physics

Volumn 96, Issue 10, 2004, Pages 5792-5796

  Hau Riege, Christine S ^a   Hau Riege, Stefan P ^b   Marathe, Amit P ^a  

^a ADVANCED MICRO DEVICES   (United States)

^b LAWRENCE LIVERMORE NATIONAL LABORATORY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

BOLTZMAN CONSTANT; ELECTRON WIND FORCE; VOID NUCLEATION;

COMPRESSIVE STRESS; COMPUTER SIMULATION; CRITICAL CURRENT DENSITY (SUPERCONDUCTIVITY); DIELECTRIC MATERIALS; ELECTROMIGRATION; INTEGRATED CIRCUITS; MICROPROCESSOR CHIPS; NUCLEATION; TENSILE STRESS;

LARGE SCALE SYSTEMS;

EID: 9944237394     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1787139     Document Type: Article

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