Demonstration, analysis, and device design considerations for independent DG MOSFETs

IEEE Transactions on Electron Devices

Volumn 52, Issue 9, 2005, Pages 2046-2053

  Masahara, Meishoku ^a   Liu, Yongxun ^a   Sakamoto, Kunihiro ^a   Endo, Kazuhiko ^a   Matsukawa, Takashi ^a   Ishii, Kenichi ^a   Sekigawa, Toshihiro ^a   Yamauchi, Hiromi ^a   Tanoue, Hisao ^a   Kanemaru, Seigo ^a   Koike, Hanpei ^a   Suzuki, Eiichi ^a  

^a NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY AIST   (Japan)

Author keywords

4T XMOSFET; FinFET; Gate workfunction; Independent double gate (DG) MOSFET; Second gate oxide thickness; Vth controllability; Vertical DGMOSFET; XMOSFET

Indexed keywords

COMPUTER SIMULATION; GATES (TRANSISTOR); OPTIMIZATION; SEMICONDUCTOR DEVICE MODELS; THRESHOLD VOLTAGE; VOLTAGE CONTROL;

GATE WORKFUNCTION; INDEPENDENT DOUBLE-GATE (DG)MOSFET; SECOND GATE OXIDE THICKNESS; VERTICAL DGMOSFET;

MOSFET DEVICES;

EID: 26244446788     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/TED.2005.855063     Document Type: Article

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