Strain-induced correlations between the phonon frequencies of indium nitride

Physica Status Solidi C: Conferences

Volumn 1, Issue 6, 2004, Pages 1420-1424

  Briot, O ^a   Gil, B ^a   Maleyre, B ^a   Ruffenach, S ^a   Pinquier, C ^b   Demangeot, F ^b   Frandon, J ^b  

^a UNIVERSITÉ MONTPELLIER 2   (France)

^b UNIVERSITÉ DE TOULOUSE   (France)

Author keywords

[No Author keywords available]

Indexed keywords

COMPACTION; EPITAXIAL GROWTH; FREQUENCIES; INDIUM; INDIUM COMPOUNDS; NITRIDES; PERMITTIVITY; PHONONS; PHOTOLUMINESCENCE; STRAIN; VAPORS; X RAY DIFFRACTION;

ABSORPTION SPECTRA; INTRINSIC PROCESSES; OSCILLATOR STRENGTH; PHONON FREQUENCIES;

SEMICONDUCTOR QUANTUM DOTS;

EID: 2542535236     PISSN: 16101634     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1002/pssc.200304079     Document Type: Conference Paper

References (39)

1. V. Yu. Davydov, A. A. Klochikhin, R. P. Seisyan, V. V. Emtsev, S. V. Ivanov, F. Bechstedt, J. Furthmüller, H. Harima, A. V. Mudryi, J. Aderhold, O. Semchinova, and J. Graul, Phys. Stat. Solidi (b), 229(3), R1 (2002). V. Yu. Davydov, A. A. Klochikhin, V. V. Emtsev, S. V. Ivanov, V. V. Vekshin, F. Bechstedt, J. Furthmüller, H. Harima, A. V. Mudryi, A. Hashimoto, A. Yamamoto, J. Aderhold, J. Graul, and E. E. Haller, phys. stat. sol. (b), 230(2), R4 (2002).
2. V. Yu. Davydov, A. A. Klochikhin, R. P. Seisyan, V. V. Emtsev, S. V. Ivanov, F. Bechstedt, J. Furthmüller, H. Harima, A. V. Mudryi, J. Aderhold, O. Semchinova, and J. Graul, Phys. Stat. Solidi (b), 229(3), R1 (2002). V. Yu. Davydov, A. A. Klochikhin, V. V. Emtsev, S. V. Ivanov, V. V. Vekshin, F. Bechstedt, J. Furthmüller, H. Harima, A. V. Mudryi, A. Hashimoto, A. Yamamoto, J. Aderhold, J. Graul, and E. E. Haller, phys. stat. sol. (b), 230(2), R4 (2002).
3. J. Wu, W. Walukiewicz, K. M. Yu, J. W. Arger III, E. E. Haller, H. Lu, W. J. Schaff, Y. Saito, and Y. Nanishi, Appl. Phys. Lett. 80, 3967 (2002). J. Wu, W. Walukiewicz, K. M. Yu, J. W. Ager III, E. E. Haller, Hai Lu, and William J. Schaff, Appl. Phys. Lett. 80, 4741 (2002).
4. J. Wu, W. Walukiewicz, K. M. Yu, J. W. Arger III, E. E. Haller, H. Lu, W. J. Schaff, Y. Saito, and Y. Nanishi, Appl. Phys. Lett. 80, 3967 (2002). J. Wu, W. Walukiewicz, K. M. Yu, J. W. Ager III, E. E. Haller, Hai Lu, and William J. Schaff, Appl. Phys. Lett. 80, 4741 (2002).
5. M. Hori, K. Kano, T. Yamaguchi, Y. Saito, T. Araki, Y. Nanishi, N. Teraguchi, and A. Suzuki, phys. stat. sol. (b) 234, 750 (2002).
6. For a review see M. Leroux and B. Gil in Gallium Nitride and Related Semiconductors edited by J. H. Edgar, S. Strite, I. Akasaki, H. Amano and C. Wetzel, EMIS DATAREVIEWS SERIES 23, INSPEC publications ISBN 0 85296 953 8 (1999), 117.
7. F. Bechstedt and J. Furthmüller, Journal of Crystal Growth 246, 315, (2002).
8. N. Takahashi, A. Niwa, H. Sugiura, and T. Nakamura, Chem. Commun. 318, (2003).
9. For a review see T. L. Tansley and E. M. Goldys, in Gallium Nitride and Related Semiconductors edited by J. H. Edgar, S. Strite, I. Akasaki, H. Amano, and C. Wetzel, EMIS DATAREVIEWS SERIES 23, INSPEC publications ISBN 0 85296 953 8, 123 (1999).
10. W. Paszkowicz, Powder Diffraction 14 (4), 258, (1999).
11. B. Gil, O. Briot, and R. L. Aulombard, Physical Review B, 52, R17028, (1995).
12. M. Tchounkeu, O. Briot, B. Gil, J. P. Alexis, and R. L. Aulombard, J. Applied Physics, 80, 5352 (1996).
13. A. Shikanai, T. Azuhata, T. Sota, S. Chichibu, A. Kuramata, K.Orino, and S. Nakamura, J. Appl. Phys. 81, 417, (1997).
14. W. Shan, R. J. Hauenstein, A. J. Fischer, J. J. Song, W. G. Perry, M. D. Bremser, R. F. Davis, and B. Goldenberg, Phys. Rev. B 54, 3460, (1996).
15. B. Gil, Semiconductors and Semi-metals, vol. 57, Chapter 6, 209 (1999).
16. O. Briot, B. Gil, S. Sanchez, and R. L. Aulombard, Inst. Phys. Conf. Series. 142, 891, (1996).
17. B. Gil, F. Hamdani, and H. Morkoç, Phys. Rev. B 54, 7678, (1996).
18. M. Zamfirescu, B. Gil, N. Grandjean, G. Malpuech, A. Kavokin, P. Bigenwald, and J. Massies, Phys. Rev. B 64, 121304R (2001).
19. F. Demangeot, J. Frandon, M. Renucci, O. Briot, B. Gil, and R. L. Aulombard, Solid State Communications, 207, 100 (1996).
20. F. Demangeot, J. Frandon, M. Renucci, O. Briot, B. Gil, and R. L. Aulombard, MRS Internet J. Nitride Semicond. Res. 1, 23 (1996).
21. J. M. Wagner and F. Bechstedt, Phys. Rev. B 66, 115202, (2002).
22. A. F. Wright, J. Appl. Phys. 82, 2833, (1997).
23. T. Inushima, T. Shiraishi, and V. Yu. Davydov, Solid State Communications 10, 491, (1999).
24. V. Yu Davydov, V. V. Emtsev, I. N. Goncharuk, A. N. Smirnov, V. D. Petrikov, V. V. Mamutin, V. A. Vekshin, S. V. Ivanov, M. B. Smirnov, and T. Inushima, Appl. Phys. Lett. 75, 3297, (1999). V. Yu. Davydov, A. A. Klochikin, M. B. Smirnov, V. V. Emtsev, V. D. Petrikov, I. A. Abroyan, A. I. Titov, I. N. Goncharuk, A. N. Smirnov, V. V. Mamutin, S. V. Ivanov, and T. Inushima, phys. stat. sol. (b) 216, 779, (1999).
25. V. Yu Davydov, V. V. Emtsev, I. N. Goncharuk, A. N. Smirnov, V. D. Petrikov, V. V. Mamutin, V. A. Vekshin, S. V. Ivanov, M. B. Smirnov, and T. Inushima, Appl. Phys. Lett. 75, 3297, (1999). V. Yu. Davydov, A. A. Klochikin, M. B. Smirnov, V. V. Emtsev, V. D. Petrikov, I. A. Abroyan, A. I. Titov, I. N. Goncharuk, A. N. Smirnov, V. V. Mamutin, S. V. Ivanov, and T. Inushima, phys. stat. sol. (b) 216, 779, (1999).
26. J. S. Dyck, K. Kim, S. Limpijumnong, W. R. L. Lambrecht, K. Kash, and J. C. Angus, Solid State Communications 114, 355, (2000).
27. K. Osamura, S. Naka, and Y. J. Murakami, J. Appl. Phys. 46, 3432, (1975).
28. H. Kwon, Y. Lee, O. Miki, H. Yamano, and A. Yoshida, Appl. Phys. Lett. 69, 937, (1996).
29. M. C. Lee, H. C. Lin, Y. C. Pan, C. K. Shu, J. Ou, W. H. Chen, W. K. Chen, Appl. Phys. Lett. 73, 2606, (1998).
30. F. Agullo-Rueda, E. E. Mendez, B. Bojarczuk, and S. Guha, Solid State Communications, 115, 19, (2000).
31. E. Kurimoto, H. Harima, A. Hashimoto, and A. Yamamoto, phys. stat. sol. (b) 228, 1, (2001). T. Matsuoka, H. Okamoto, M. Nakao, H. Harima, and E. Kurimoto, Appl. Phys. Lett. 81, 1246 (2002).
32. E. Kurimoto, H. Harima, A. Hashimoto, and A. Yamamoto, phys. stat. sol. (b) 228, 1, (2001). T. Matsuoka, H. Okamoto, M. Nakao, H. Harima, and E. Kurimoto, Appl. Phys. Lett. 81, 1246 (2002).
33. G. Kaczmarczyk, A. Kaschner, S. Reich, A. Hoffmann, C. Thomsen Appl., D. J. As, A. P. Lima, D. Schikora, K. Lischka, R. Averbeck, and H. Riechert Appl. Phys. Lett. 76, 2122 (2000).
34. O. Briot, J. P. Alexis, B. Gil and R. L. Aulombard, Mat. Res. Society Proc. 395, 207 (1996). O. Briot, B. Gil, M. Tchounkeu, R. L. Aulombard, F. Demangeot, J. Frandon, and M. A. Renucci, J. Electron. Mater. 26, 294 (1997).
35. O. Briot, J. P. Alexis, B. Gil and R. L. Aulombard, Mat. Res. Society Proc. 395, 207 (1996). O. Briot, B. Gil, M. Tchounkeu, R. L. Aulombard, F. Demangeot, J. Frandon, and M. A. Renucci, J. Electron. Mater. 26, 294 (1997).
36. C. Kisielowski, Semiconductors and Semi-Metals vol. 57, Chapter 7, 275, (1999).
37. O. Briot, B. Maleyre, and S. Ruffenach, Appl. Phys. Lett. 83, 2919, (2003).
38. J. M. Wagner and F. Bechstedt, Appl. Phys. Lett. 77, 346 (2000).
39. F. Demangeot, J. Frandon, M. A. Renucci, C. Meny, O. Briot, and R. L. Aulombard, J. Appl. Phys. 82, 1305 (1997).