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Physical Review B - Condensed Matter and Materials Physics

Volumn 64, Issue 12, 2001, Pages 1213041-1213044

Extremely sharp dependence of the exciton oscillator strength on quantum-well width in the GaN/AlxGa1-xN system: The polarization field effect

(7) Zamfirescu, Marian a Gil, Bernard b Grandjean, Nicolas c Malpuech, Guilllaume a Kavokin, Alexey a Bigenwald, Pierre d Massies, Jean c

a UNIVERSITÉ CLERMONT AUVERGNE (France)

b CNRS (France)

c CRHEA CNRS (France)

d UNIVERSITY OF AVIGNON (France)

Author keywords

[No Author keywords available]

Indexed keywords

ALUMINUM; GALLIUM; NITROGEN;

ARTICLE; ELECTROCHEMISTRY; OSCILLATION; POLARIZATION; QUANTUM CHEMISTRY; REFLECTOMETRY;

EID: 0035883632 PISSN: 01631829 EISSN: None Source Type: Journal
DOI: None Document Type: Article

Times cited : (28)

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