MOVPE growth and optical properties of GaN deposited on c-plane sapphire

Journal of Electronic Materials

Volumn 26, Issue 3, 1997, Pages 294-300

  Briot, O ^a   Gil, B ^a   Tchounkeu, M ^a   Aulombard, R L ^a   Demangeot, F ^b   Frandon, J ^b   Renucci, M ^b  

^a CNRS   (France)

^b UNIVERSITÉ DE TOULOUSE   (France)

Author keywords

GaN; Growth; Metalorganic vapor phase epitaxy (MOVPE); Photoluminescence; Raman spectroscopy

Indexed keywords

EID: 0042880108     PISSN: 03615235     EISSN: None     Source Type: Journal    
DOI: 10.1007/s11664-997-0167-8     Document Type: Article

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