Photomask dimensional metrology in the scanning electron microscope, part I: Has anything really changed?

Journal of Microlithography, Microfabrication and Microsystems

Volumn 3, Issue 2, 2004, Pages 212-223

  Postek, Michael T ^a   Vladár, András E ^a   Bennett, Marylyn Hoy ^b  

^a NATIONAL INSTITUTE OF STANDARDS AND TECHNOLOGY   (United States)

^b TEXAS INSTRUMENTS   (United States)

Author keywords

Accuracy; Charging; Critical dimension; Metrology; Photomask; Scanning electron microscope; Traceability

Indexed keywords

ACCURACY; CHARGING; CRITICAL DIMENSION; PHOTOMASK; SCANNING ELECTRON MICROSCOPE; TRACEABILITY;

ELECTRON BEAMS; ERROR ANALYSIS; PHASE SHIFT; POLYSILICON; SCANNING; SCANNING ELECTRON MICROSCOPY; SENSITIVITY ANALYSIS;

MASKS;

EID: 2542498119     PISSN: 15371646     EISSN: None     Source Type: Journal    
DOI: 10.1117/1.1668271     Document Type: Article

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