Origin of the excellent thermal stability of Al/Si-based ohmic contacts to p-type LPE 4H-SiC

Materials Science Forum

Volumn 353-356, Issue , 2001, Pages 251-254

  Kassamakova, Liliana ^a   Kakanakov, Roumen ^a   Kassamakov, Ivan ^a   Zekentes, Konstantinos ^b   Tsagaraki, Katerina ^b   Atanasova, Genoveva ^c  

^a BULGARIAN ACADEMY OF SCIENCES   (Bulgaria)

^b INSTITUTE OF ELECTRONIC STRUCTURE AND LASER   (Greece)

^c INSTITUTE OF GENERAL AND INORGANIC CHEMISTRY   (Bulgaria)

Author keywords

[No Author keywords available]

Indexed keywords

AGING OF MATERIALS; ALUMINUM COMPOUNDS; ANNEALING; ATOMIC FORCE MICROSCOPY; COMPOSITION EFFECTS; DETERIORATION; ELECTRIC RESISTANCE MEASUREMENT; LIQUID PHASE EPITAXY; SILICON CARBIDE; THERMAL EFFECTS; THERMODYNAMIC STABILITY; TITANIUM;

OPTIMUM ANNEALING TEMPERATURE; TRANSMISSION LINE MODEL;

OHMIC CONTACTS;

EID: 14344278003     PISSN: 02555476     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.4028/www.scientific.net/msf.353-356.251     Document Type: Article

References (6)

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