Schottky barrier height dependence on the metal work function for p-type 4H-silicon carbide

Journal of Electronic Materials

Volumn 30, Issue 3, 2001, Pages 242-246

  Lee, S K ^a   Zetterling, C M ^a   Ostling M ^a  

^a ROYAL INSTITUTE OF TECHNOLOGY   (Sweden)

Author keywords

4H SiC; Fermi level pinning; Rectification; Schottky barrier diodes; Work function

Indexed keywords

CURRENT VOLTAGE CHARACTERISTICS; FERMI LEVEL; METAL WORKING; SCHOTTKY BARRIER DIODES; TEMPERATURE;

CURRENT VOLTAGE CHARATERISTICS; FERMI LEVEL PINNING; SCHOTTKY BARRIER HEIGHT;

SILICON CARBIDE;

EID: 0035274282     PISSN: 03615235     EISSN: None     Source Type: Journal    
DOI: 10.1007/s11664-001-0023-1     Document Type: Article

References (18)