Drain disturb during CHISEL programming of NOR flash EEPROMs - Physical mechanisms and impact of technological parameters

IEEE Transactions on Electron Devices

Volumn 51, Issue 5, 2004, Pages 701-707

  Nair, Deleep R ^a   Mahapatra, S ^a   Shukuri, S ^b   Bude, Jeff D ^c  

^a INDIAN INSTITUTE OF TECHNOLOGY BOMBAY   (India)

^b RENESAS TECHNOLOGY CORP   (Japan)

^c AGERE SYSTEMS   (United States)

Author keywords

Band to band tunneling; Channel hot electron (CHE); Channel initiated secondary electron (CHISEL); Device scaling; Drain disturb; Flash EEPROMs; Hot carriers; Monte Carlo simulation

Indexed keywords

COMPUTER SIMULATION; ELECTRON TUNNELING; ELECTRONS; HOT CARRIERS; MONTE CARLO METHODS; TEMPERATURE;

BAND TO BAND TUNNELING; CHANNEL INITIATED SECONDARY ELECTRON; DRAIN DISTURB;

ELECTRON DEVICES;

EID: 2442480725     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/TED.2004.825821     Document Type: Article

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