CHISEL flash EEPROM - Part II: Reliability

IEEE Transactions on Electron Devices

Volumn 49, Issue 7, 2002, Pages 1302-1307

  Mahapatra, Souvik ^b,c   Shukuri, S ^d   Bude, Jeff ^a,b  

^a IEEE

^b AGERE SYSTEMS   (United States)

^c INDIAN INSTITUTE OF TECHNOLOGY BOMBAY   (India)

^d HITACHI LTD   (Japan)

Author keywords

Channel hot electron (CHE); Channel initiated secondary electron (CHISEL); Cycling endurance; Data retention; Device degradation; Flash EEPROM; Hot carriers; MOSFET

Indexed keywords

COMPUTER PROGRAMMING; COMPUTER SIMULATION; HOLE TRAPS; HOT CARRIERS; MOSFET DEVICES; RELIABILITY; THRESHOLD VOLTAGE; VOLTAGE DISTRIBUTION MEASUREMENT;

CHANNEL HOT ELECTRON; CHANNEL INITIATED SECONDARY ELECTRON; DATA RETENTION; DRAIN BIAS;

FLASH MEMORY;

EID: 0036637851     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/TED.2002.1013290     Document Type: Article

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