A better understanding of substrate enhanced gate current in VLSI MOSFET's and flash cells - part II: Physical analysis

IEEE Transactions on Electron Devices

Volumn 46, Issue 2, 1999, Pages 376-382

  Selmi, Luca ^a   Esseni, David ^b  

^a UNIVERSITY OF BOLOGNA   (Italy)

^b UNIVERSITY OF UDINE   (Italy)

Author keywords

Charge injection; EPROM; Hot carriers; Mosfet's; Substrate voltage

Indexed keywords

COMPUTER SIMULATION; CORRELATION METHODS; ELECTRIC CURRENTS; GATES (TRANSISTOR); HOT CARRIERS; PHOTONS; PROM; SUBSTRATES; VLSI CIRCUITS;

CHARGE INJECTION; ERASABLE PROGRAMMABLE READ ONLY MEMORY (EPROM); SUBSTRATE ENHANCED ELECTRON INJECTION (SEEI);

MOSFET DEVICES;

EID: 0033079579     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/16.740905     Document Type: Article

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