CHISEL flash EEPROM - Part I: Performance and scaling

IEEE Transactions on Electron Devices

Volumn 49, Issue 7, 2002, Pages 1296-1301

  Mahapatra, Souvik ^b,c   Shukuri, S ^d   Bude, Jeff ^a,b  

^a IEEE

^b AGERE SYSTEMS   (United States)

^c INDIAN INSTITUTE OF TECHNOLOGY BOMBAY   (India)

^d HITACHI LTD   (Japan)

Author keywords

Channel hot electron (CHE); Channel initiated secondary electron (CHISEL); Device scaling; Flash EEPROM; MOSFET; Programming efficiency

Indexed keywords

COMPUTER PROGRAMMING; COMPUTER SIMULATION; EFFICIENCY; HOT CARRIERS; MONTE CARLO METHODS; MOSFET DEVICES; PERFORMANCE;

CHANNEL HOT ELECTRON; CHANNEL INITIATED SECONDARY ELECTRON; DRAIN BIAS; ELECTRON INJECTION; FLASH CELLS; FLOATING GATE;

FLASH MEMORY;

EID: 0036638639     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/TED.2002.1013289     Document Type: Article

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